OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

STGW25M120DF3

STGW25M120DF3
Mfr. #:
STGW25M120DF3
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW25M120DF3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW25M120DF3 más información STGW25M120DF3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.85 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
50 A
Pd - Disipación de energía:
326 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGW25M120DF3
Embalaje:
Tubo
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
STGW25, STGW2, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors IGBT & Power Bipolar
***i-Key
IGBT H-SERIES 1200V 25A TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***(Formerly Allied Electronics)
1200V TRENCH IGBT FOR INDUCTION COOKING50A COPAK-247
*** Electronic Components
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
***Yang
, IGBT, N, , 1200V, 50A, TO-247AC
***nell
IGBT,N CH,DIODE,1200V,50A,TO-247AC; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:179W
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGWA25H120: 1200 V 50 A 375 W Trench Gate Field-Stop IGBT - TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A Field Stop Trench
***ark
RAIL/1200V 25A FS2 Trench IGBT
*** Stop Electro
Insulated Gate Bipolar Transistors
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
Parte # Mfg. Descripción Valores Precio
STGW25M120DF3
DISTI # 497-15058-5-ND		STMicroelectronicsIGBT 1200V 50A 375W
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$6.5430
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$5.2900
  • 1200:$5.0900
  • 2400:$4.8900
  • 3600:$4.5900
  • 6000:$4.4900
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 30:€3.7100
STGW25M120DF3
DISTI # 511-STGW25M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
RoHS: Compliant		0
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4100
  • 250:$6.1300
  • 500:$5.5800
STGW25M120DF3
DISTI # IGBT1559		STMicroelectronicsIGBT 1200V 25A 1,85VTO247-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 600:$4.8700
STGW25M120DF3STMicroelectronics 
RoHS: Compliant		Europe - 600
    STGW25M120DF3
    DISTI # STGW25M120DF3    		STMicroelectronics1200V 50A 375W TO247
    RoHS: Not Compliant    		50
    • 5:€4.9600
    • 30:€4.3600
    • 120:€4.0600
    • 300:€3.9100
    STGW25M120DF3
    DISTI # 2470026    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3
    RoHS: Compliant    		0
    • 1:£7.0300
    • 5:£6.4800
    • 10:£5.5900
    • 50:£5.2200
    • 100:£4.8500
    STGW25M120DF3
    DISTI # C1S730200974138    		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		600
    • 600:$4.3100
    • 300:$4.6800
    • 100:$5.1400
    • 50:$5.9200
    • 10:$5.9800
    • 1:$8.2500
    Imagen Parte # Descripción
    FGH40T120SQDNL4

    Mfr.#: FGH40T120SQDNL4

    OMO.#: OMO-FGH40T120SQDNL4

    		 IGBT Transistors IGBT 1200V 40A UFS
    NGTB40N120FL3WG

    Mfr.#: NGTB40N120FL3WG

    OMO.#: OMO-NGTB40N120FL3WG

    		 IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
    NGTB40N120S3WG

    Mfr.#: NGTB40N120S3WG

    OMO.#: OMO-NGTB40N120S3WG

    		 IGBT Transistors IGBT 1200V 40A FS3 LOW VF
    STGW40H120DF2

    Mfr.#: STGW40H120DF2

    OMO.#: OMO-STGW40H120DF2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    FGA25N120ANTDTU

    Mfr.#: FGA25N120ANTDTU

    OMO.#: OMO-FGA25N120ANTDTU

    		 IGBT Transistors Copak Discrete
    FGH25T120SMD-F155

    Mfr.#: FGH25T120SMD-F155

    OMO.#: OMO-FGH25T120SMD-F155

    		 IGBT Transistors 1200V, 25A Field Stop Trench IGBT
    NGTB40N120FL2WG

    Mfr.#: NGTB40N120FL2WG

    OMO.#: OMO-NGTB40N120FL2WG

    		 IGBT Transistors 1200V/40A FAST IGBT FSII
    MC14584BDTR2G

    Mfr.#: MC14584BDTR2G

    OMO.#: OMO-MC14584BDTR2G

    		 Inverters 3-18V CMOS Hex Schmitt Trigger
    STGW40H120DF2

    Mfr.#: STGW40H120DF2

    OMO.#: OMO-STGW40H120DF2-STMICROELECTRONICS

    		 IGBT 1200V 40A HS TO-247
    FGA25N120ANTDTU

    Mfr.#: FGA25N120ANTDTU

    OMO.#: OMO-FGA25N120ANTDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 50A 312W TO3P
    Disponibilidad
    Valores:
    578
    En orden:
    2561
    Ingrese la cantidad:
    El precio actual de STGW25M120DF3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    8,56 US$
    8,56 US$
    10
    7,74 US$
    77,40 US$
    25
    7,38 US$
    184,50 US$
    100
    6,40 US$
    640,00 US$
    250
    6,12 US$
    1 530,00 US$
    500
    5,58 US$
    2 790,00 US$
    1000
    4,86 US$
    4 860,00 US$
    2500
    4,68 US$
    11 700,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    • MDmesh™ M6 Series 600 V Power MOSFETs
      MDmesh™ M6 Series 600 V Power MOSFETs
      STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
    • Compare STGW25M120DF3
      Compare STGW25M120DF3
      STGW25H120DF vs STGW25H120DF2 vs STGW25H120F
    • LDCL015 Series
      LDCL015 Series
      STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
    • VNI8200XP Monolithic 8-Channel Driver
      VNI8200XP Monolithic 8-Channel Driver
      STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
    • Ultra-Low Power Arm® Cortex®-M4 MCUs
      Ultra-Low Power Arm® Cortex®-M4 MCUs
      STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
    • LSM303C e-compass Accelerometer
      LSM303C e-compass Accelerometer
      STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
    More Newest Products
    Top