BSC100N03MSGATMA1 vs BSC100N03MS G vs BSC100N03MSGATMA1 , TDZ

 
PartNumberBSC100N03MSGATMA1BSC100N03MS GBSC100N03MSGATMA1 , TDZ
DescriptionMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3MMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current44 A44 A-
Rds On Drain Source Resistance8.3 mOhms8.3 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge23 nC23 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W30 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3MOptiMOS 3M-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min27 S27 S-
Fall Time5.4 ns5.4 ns-
Product TypeMOSFETMOSFET-
Rise Time4.8 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time8.5 ns8.5 ns-
Part # AliasesBSC100N03MS BSC1N3MSGXT G SP000311515BSC100N03MSGATMA1 BSC1N3MSGXT SP000311515-
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