GS66508T-E02-MR

GS66508T-E02-MR
Mfr. #:
GS66508T-E02-MR
Fabricante:
GaN Systems
Descripción:
MOSFET 650V 30A E-Mode GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS66508T-E02-MR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS66508T-E02-MR más información
Atributo del producto
Valor de atributo
Fabricante
Sistemas de GaN
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Tecnología
GaN
Número de canales
1 Channel
Configuración
Único
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
10 V
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Resistencia a la fuente de desagüe de Rds
55 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
6.5 nC
Modo de canal
Mejora
Tags
GS66508T, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descripción Valores Precio
GS66508T-E02-MR
DISTI # 499-GS66508T-E02-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
3144
  • 1:$16.2500
  • 10:$15.7300
  • 25:$14.9900
  • 250:$13.9200
GS66508T-E02-MR
DISTI # GS66508T-E02-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
750
  • 250:$12.9800
Imagen Parte # Descripción
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

Nuevo y original
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de GS66508T-E02-MR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
19,47 US$
19,47 US$
10
18,50 US$
184,96 US$
100
17,52 US$
1 752,30 US$
500
16,55 US$
8 274,75 US$
1000
15,58 US$
15 576,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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