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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| GS66508B-EVBDB1 DISTI # 499-GS66508B-EVBDB1 | GaN Systems | Power Management IC Development Tools GS66508B Half Bridge Daughter Board RoHS: Compliant | 2 |
|
| GS66508B-EVBDB DISTI # 499-GS66508B-EVBDB | GaN Systems | Power Management IC Development Tools GS66508B Half Bridge Daughter Board RoHS: Compliant | 0 | |
| GS66508B-EVBDB1 DISTI # GS66508B-EVBDB | GaN Systems | GAN POWER TRANSISTOR TEST/EVALUATION PRODUCT RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR |
MOSFET 650V 30A E-Mode GaN |
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Mfr.#: GS66508P-E05-MR OMO.#: OMO-GS66508P-E05-MR |
MOSFET 650V 30A E-Mode GaN |
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Mfr.#: GS66508B-EVBDB OMO.#: OMO-GS66508B-EVBDB-1190 |
Power Management IC Development Tools GS66508B Half Bridge Daughter Board |
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Mfr.#: GS66508P-E05-MR OMO.#: OMO-GS66508P-E05-MR-1190 |
MOSFET 650V 30A E-Mode GaN |
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Mfr.#: GS66508T-E02 OMO.#: OMO-GS66508T-E02-1190 |
Nuevo y original |
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Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR-1190 |
MOSFET 650V 30A E-Mode GaN |
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Mfr.#: GS66508P-E05-TY OMO.#: OMO-GS66508P-E05-TY-128 |
MOSFET 650V 30A E-Mode GaN Preproduction Units |
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Mfr.#: GS66508P-E04-TY OMO.#: OMO-GS66508P-E04-TY-128 |
MOSFET 650V 30A E-Mode GaN Preproduction Units |
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Mfr.#: GS66508T-E01-TY OMO.#: OMO-GS66508T-E01-TY-128 |
MOSFET Top cooled 650V GaN Transisto |