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SI2316DS-T1-GE3

SI2316DS-T1-GE3
Mfr. #:
SI2316DS-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2316DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2316DS-T1-GE3 DatasheetSI2316DS-T1-GE3 Datasheet (P4-P6)SI2316DS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SI2316DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI2
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2316DS-GE3
Unidad de peso:
0.000282 oz
Tags
SI2316D, SI2316, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 30V 2.9A SOT23-3
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
N CHANNEL MOSFET, 30V, 3.4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:0.8V ;RoHS Compliant: Yes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2316DS-T1-GE3
DISTI # V36:1790_09216801		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2454
  • 1500000:$0.2456
  • 300000:$0.2511
  • 30000:$0.2588
  • 3000:$0.2600
SI2316DS-T1-GE3
DISTI # SI2316DS-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 2.9A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2741
SI2316DS-T1-GE3
DISTI # SI2316DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (Alt: SI2316DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.2599
  • 18000:€0.2789
  • 12000:€0.3019
  • 6000:€0.3509
  • 3000:€0.5149
SI2316DS-T1-GE3
DISTI # SI2316DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2299
  • 18000:$0.2369
  • 12000:$0.2429
  • 6000:$0.2539
  • 3000:$0.2619
SI2316DS-T1-GE3
DISTI # 12R3248		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW RoHS Compliant: Yes0
  • 2500:$0.3100
  • 1000:$0.3910
  • 500:$0.4450
  • 250:$0.5190
  • 100:$0.5840
  • 50:$0.6590
  • 25:$0.7240
  • 1:$0.8070
SI2316DS-T1-GE3
DISTI # 781-SI2316DS-GE3		Vishay IntertechnologiesMOSFET 30V 3.4A 0.96W 50mohm @ 10V
RoHS: Compliant		0
  • 3000:$0.2600
  • 6000:$0.2430
  • 9000:$0.2340
SI2316DS-T1-GE3Vishay Intertechnologies 2629
    SI2316DS-T1-GE3Vishay IntertechnologiesMOSFET 30V 3.4A 0.96W 50mohm @ 10V
    RoHS: Compliant    		Americas -
      Imagen Parte # Descripción
      SI2316DS-T1-E3

      Mfr.#: SI2316DS-T1-E3

      OMO.#: OMO-SI2316DS-T1-E3

      		 MOSFET 30V 3.4A 0.96W 50mohm @ 10V
      SI2316DS-T1-GE3

      Mfr.#: SI2316DS-T1-GE3

      OMO.#: OMO-SI2316DS-T1-GE3

      		 MOSFET 30V 3.4A 0.96W 50mohm @ 10V
      SI2316DS-T1

      Mfr.#: SI2316DS-T1

      OMO.#: OMO-SI2316DS-T1-1190

      		 MOSFET RECOMMENDED ALT 781-SI2316BDS-E3
      SI2316DS-T1-E3

      Mfr.#: SI2316DS-T1-E3

      OMO.#: OMO-SI2316DS-T1-E3-VISHAY

      		 MOSFET N-CH 30V 2.9A SOT23-3
      SI2316DS-T1-GE3

      Mfr.#: SI2316DS-T1-GE3

      OMO.#: OMO-SI2316DS-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 2.9A SOT23-3
      SI2316DS-T1-E3-CUT TAPE

      Mfr.#: SI2316DS-T1-E3-CUT TAPE

      OMO.#: OMO-SI2316DS-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SI2316DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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