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SI2316DS-T1-E3

SI2316DS-T1-E3
Mfr. #:
SI2316DS-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2316DS-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2316DS-T1-E3 DatasheetSI2316DS-T1-E3 Datasheet (P4-P6)SI2316DS-T1-E3 Datasheet (P7-P8)
ECAD Model:
Más información:
SI2316DS-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.45 mm
Longitud:
2.9 mm
Serie:
SI2
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2316DS-E3
Unidad de peso:
0.000282 oz
Tags
SI2316D, SI2316, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    N***v
    N***v
    RU

    Fast delivery, quality is good. Seller thanks

    2019-05-16
    M***r
    M***r
    DE

    Untested so far, but were delivered on tape.

    2019-05-05
    G***v
    G***v
    RU

    Delivered on time.Installation quality.All 4 pieces work...

    2019-06-19
    D***V
    D***V
    RU

    Ordered 50 pieces and came 40. It's very offensive. It's been 1.5 months. This seller will not order anymore. There's no point in opening a dispute.

    2019-03-30
***ure Electronics
Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236
***enic
30V 2.9A 50m´Î@10V3.4A 700mW 800mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ical
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:800Mv Rohs Compliant: No
***ical
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
***ronik
N-CHANNEL-FET 4A 30V SOT23 RoHSconf
***nell
N CHANNEL MOSFET, 30V, 4A, TO-236
*** Electronics
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
***ment14 APAC
N CHANNEL MOSFET, 30V, 4A, TO-236; Trans; N CHANNEL MOSFET, 30V, 4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
***ure Electronics
Single N-Channel 30 V 0.07 Ohm 0.75 W Surface Mount Power Mosfet - SOT-23-3
***et
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
***enic
30V 3.2A 750mW 70m´Î@10V2.5A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 3.2A, TO-236; Tra; N CHANNEL MOSFET, 30V, 3.2A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
***ure Electronics
Single P-Channel 30 V 0.053 Ohms Surface Mount Power Mosfet - TO-236 (SOT-23)
***et
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R
***enic
30V 3.1A 53m´Î@10V4A 750mW 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ment14 APAC
P CHANNEL MOSFET, -30V, 4A, TO-236; Tran; P CHANNEL MOSFET, -30V, 4A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3
*** Source Electronics
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 2.7A SOT23-3
***ure Electronics
P Channel 30 V 190 mO 1.08 W 8.2 nC Surface Mount Power MosFet - SOT-23
***ark
Mosfet, P-Ch, 30V, 2.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMP3160L-7
***ure Electronics
N-Channel 30 V 0.08 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23
***ark
Mosfet, N-Ch, 30V, 2.9A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. ZXMN3B14FTA
***et
Trans MOSFET N-CH 30V 3.5A 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
MOSFET N-Channel 30V 3.5A SOT23 | Diodes Inc ZXMN3B14FTA
***ure Electronics
Single N-Channel 30 V 200 mOhm 650 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 30V 2.2A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 30V, 2.2A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN3200U-7
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 90m Ω @ 2.2A, 4.5V 2.2A Ta -55°C~150°C TJ MOSFET N-CH 30V 2.2A SOT23-3
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2316DS-T1-E3
DISTI # V72:2272_09216800		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
RoHS: Compliant		151
  • 100:$0.4806
  • 25:$0.5520
  • 10:$0.6746
  • 1:$0.7670
SI2316DS-T1-E3
DISTI # V36:1790_09216800		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.4909
SI2316DS-T1-E3
DISTI # SI2316DS-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 2.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		39083In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI2316DS-T1-E3
DISTI # SI2316DS-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 2.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		39083In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI2316DS-T1-E3
DISTI # SI2316DS-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 2.9A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		36000In Stock
  • 30000:$0.2290
  • 15000:$0.2351
  • 6000:$0.2441
  • 3000:$0.2622
SI2316DS-T1-E3
DISTI # 25790283		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
RoHS: Compliant		151
  • 14:$0.7670
SI2316DS-T1-E3
DISTI # SI2316DS-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2316DS-T1-E3
    DISTI # SI2316DS-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316DS-T1-E3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.4615
    • 18000:$0.4743
    • 12000:$0.4878
    • 6000:$0.5085
    • 3000:$0.5240
    SI2316DS-T1-E3
    DISTI # SI2316DS-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.2599
    • 18000:€0.2789
    • 12000:€0.3019
    • 6000:€0.3509
    • 3000:€0.5149
    SI2316DS-T1-E3
    DISTI # 85W2139    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1000:$0.7060
    • 500:$0.7960
    • 250:$0.9510
    • 100:$1.0500
    • 50:$1.1700
    • 25:$1.2900
    • 1:$1.3600
    SI2316DS-T1-E3.
    DISTI # 15AC0292    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:700mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.4620
    • 18000:$0.4750
    • 12000:$0.4880
    • 6000:$0.5090
    • 1:$0.5240
    SI2316DS-T1-E3
    DISTI # 781-SI2316DS-T1-E3    		Vishay IntertechnologiesMOSFET 30V 3.4A 0.96W 50mohm @ 10V
    RoHS: Compliant    		3346
    • 1:$1.2500
    • 10:$1.0300
    • 100:$0.7960
    • 500:$0.6850
    • 1000:$0.5400
    SI2316DS-T1
    DISTI # 781-SI2316DS    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2316BDS-E3
    RoHS: Compliant    		0
      SI2316DS-T1-E3Vishay Semiconductors 12392
      • 5334:$0.1250
      • 2001:$0.1500
      • 1:$1.0000
      SI2316DS-T1-E3Vishay Siliconix 15490
      • 7:$0.7500
      • 21:$0.3750
      • 135:$0.2250
      • 668:$0.1500
      • 2335:$0.1125
      • 5557:$0.1013
      SI2316DS-T1-E3Vishay Siliconix 5314
        SI2316DS-T1-E3
        DISTI # TMOS1381        		Vishay IntertechnologiesN-CH 30V 2,9A 50mOhm SOT-23
        RoHS: Compliant        		Stock DE - 0Stock HK - 0Stock US - 0
        • 3000:$0.3089
        • 6000:$0.2913
        • 9000:$0.2736
        • 12000:$0.2383
        SI2316DST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
        RoHS: Compliant        		1770
          SI2316DS-T1-E3Vishay IntertechnologiesMOSFET 30V 3.4A 0.96W 50mohm @ 10V
          RoHS: Compliant          		Americas -
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            Disponibilidad
            Valores:
            Available
            En orden:
            1986
            Ingrese la cantidad:
            El precio actual de SI2316DS-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            1,25 US$
            1,25 US$
            10
            1,03 US$
            10,30 US$
            100
            0,80 US$
            79,60 US$
            500
            0,68 US$
            342,50 US$
            1000
            0,54 US$
            540,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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