PartNumber | SI2316BDS-T1-GE3 | SI2316DS-T1-E3 | SI2316BDS-T1-E3 |
Description | MOSFET 30V 4.5A 1.66W 50mohm @ 10V | MOSFET 30V 3.4A 0.96W 50mohm @ 10V | MOSFET 30V 4.5A 1.66W |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 4.5 A | - | - |
Rds On Drain Source Resistance | 50 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 6.35 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.66 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.45 mm | 1.45 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | SI2 | SI2 | SI2 |
Transistor Type | 1 N-Channel | - | - |
Width | 1.6 mm | 1.6 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 6 S | - | - |
Fall Time | 7 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 12 ns | - | - |
Typical Turn On Delay Time | 4.5 ns | - | - |
Part # Aliases | SI2316BDS-GE3 | SI2316DS-E3 | SI2316BDS-E3 |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |