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FDMD85100

FDMD85100
Mfr. #:
FDMD85100
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors MOSFET 100V Dual N-Channel PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMD85100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
FDMD85100 más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.008818 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-PowerWDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-Power 5x6
Configuración
Doble
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
2.2W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
2230pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
10.4A
Rds-On-Max-Id-Vgs
9.9 mOhm @ 10.4A, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
31nC @ 10V
Disipación de potencia Pd
50 W 50 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4.2 ns 4.4 ns
Hora de levantarse
5 ns 5.6 ns
Vgs-Puerta-Fuente-Voltaje
20 V 20 V
Id-corriente-de-drenaje-continua
48 A 48 A
Vds-Drain-Source-Breakdown-Voltage
100 V 100 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V 2V
Resistencia a la fuente de desagüe de Rds
18.7 mOhms 18.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19 ns 18 ns
Tiempo de retardo de encendido típico
14 ns 12.5 ns
Qg-Gate-Charge
22 nC 21 nC
Transconductancia directa-Mín.
27 S 26 S
Modo de canal
Mejora
Tags
FDMD85, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL
***rchild Semiconductor
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDMD85100
DISTI # V72:2272_06337942		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC2898
  • 1000:$1.4840
  • 500:$1.7360
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 1:$2.7030
FDMD85100
DISTI # FDMD85100CT-ND		ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5182In Stock
  • 1000:$1.6904
  • 500:$2.0043
  • 100:$2.4752
  • 10:$3.0190
  • 1:$3.3800
FDMD85100
DISTI # FDMD85100DKR-ND		ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5182In Stock
  • 1000:$1.6904
  • 500:$2.0043
  • 100:$2.4752
  • 10:$3.0190
  • 1:$3.3800
FDMD85100
DISTI # FDMD85100TR-ND		ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$1.5591
FDMD85100
DISTI # 27527757		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC9000
  • 3000:$1.5590
FDMD85100
DISTI # 25975390		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC2898
  • 1000:$1.4840
  • 500:$1.7360
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 5:$2.7030
FDMD85100
DISTI # FDMD85100		ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD85100)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
  • 30000:$1.2900
FDMD85100
DISTI # FDMD85100		ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R (Alt: FDMD85100)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€2.2900
  • 6000:€1.7900
  • 12000:€1.5900
  • 18000:€1.3900
  • 30000:€1.3900
FDMD85100
DISTI # 512-FDMD85100		ON SemiconductorMOSFET FET 100V 9.9 MOHM PQFN56
RoHS: Compliant		2807
  • 1:$2.8300
  • 10:$2.4000
  • 100:$2.0800
  • 250:$1.9800
  • 500:$1.7700
  • 1000:$1.5000
FDMD85100Fairchild Semiconductor CorporationPower Field-Effect Transistor
RoHS: Compliant		2101
  • 1000:$1.5500
  • 500:$1.6300
  • 100:$1.7000
  • 25:$1.7700
  • 1:$1.9100
FDMD85100
DISTI # C1S541901391436		ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R
RoHS: Compliant		2898
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 1:$2.7030
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Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de FDMD85100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,94 US$
1,94 US$
10
1,84 US$
18,38 US$
100
1,74 US$
174,15 US$
500
1,64 US$
822,40 US$
1000
1,55 US$
1 548,00 US$
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