FDMD8240L

Mfr. #:: FDMD8240L
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDMD8240L Ficha de datos
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Más información:: FDMD8240L más información

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PQFN-12

Número de canales:: 2 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 40 V

Id - Corriente de drenaje continua:: 98 A

Rds On - Resistencia de la fuente de drenaje:: 3.95 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 1 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 40 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 42 W

Configuración:: Doble

Modo de canal:: Mejora

Nombre comercial:: Clip de energía

Embalaje:: Carrete

Altura:: 0.8 mm

Longitud:: 5 mm

Serie:: FDMD8240L

Tipo de transistor:: 2 N-Channel

Ancho:: 3.3 mm

Marca:: ON Semiconductor / Fairchild

Transconductancia directa - Mín .:: 107 S

Otoño:: 9 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 8 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 36 ns

Tiempo típico de retardo de encendido:: 12 ns

Unidad de peso:: 0.002904 oz

Tags: FDMD82, FDMD, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMD8240L Descripción

***Yang: Transistor MOSFET Array Dual N-CH 40V 98A 12-Pin PowerFLAT T/R - Tape and Reel

***ical: Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R

***emi: Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ

***nell: MOSFET, DUAL N-CH, 40V, 98A, PQFN-12L; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 42W; Transistor Case Style: PQFN; No. of Pins: 12Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This device includes two 40V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain are internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

***emi: N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ

***ment14 APAC: MOSFET,N CH,40V,25A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Source Voltage Vds:40V; On Resistance

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET,N CH,40V,25A,POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 49A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 104W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***ure Electronics: Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R / MOSFET N-CH 40V 27.2A 8-SOIC

***ark: N Channel Mosfet, 40V, 27.2A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:27.2A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.006Ohm; Rds(On) Test Voltage Vgs:25V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes

***ure Electronics: N-Channel 30 V 42 A 2.4 mOhm Surface Mount PowerTrench® SyncFETTM - Power56

*** Stop Electro: Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

*** Source Electronics: Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R / MOSFET N-CH 30V 20A 8-PQFN

***emi: N-Channel PowerTrench® MOSFET 30V, 20A, 2.2mΩ

***ure Electronics: N-Channel 30 V 20 A 2.2 mOhm Surface Mount PowerTrench® Mosfet - Power 33

*** Stop Electro: Power Field-Effect Transistor, 20A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ure Electronics: Single N-Channel 40 V 0.0055 Ohms Surface Mount Power Mosfet - PolarPAK

***ark: N Channel Mosfet, 40V, 50A Polarpak, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:103A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:104W; Transistor Case Style:PolarPAK; SVHC:No SVHC (20-Jun-2011); N-channel Gate Charge:25nC; On State Resistance @ Vgs = 4.5V:7mohm; On State resistance @ Vgs = 10V:5.5mohm; Package / Case:PolarPAK; Power Dissipation Pd:104W; Power Dissipation Pd:104mW; Pulse Current Idm:80A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V

***eco: Transistor MOSFET Negative Channel 40 Volt 18A 8-Pin SOIC

***ure Electronics: Single N-Channel 40 V 5 mOhm 33 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 40V 18A 8-Pin SOIC N T/R / MOSFET N-CH 40V 18A 8-SOIC

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 40V,RDS(ON) 4 Milliohms,ID 18A,SO-8,PD 2.5W,VGS +/-20V

***ark: N Channel Mosfet, 40V, 18A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.005Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: Yes

*** Stop Electro: Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

FDMD8240L Más información

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDMD8240L DISTI # V72:2272_16119250	ON Semiconductor	Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R	2430	1000:$1.2709 500:$1.4285 250:$1.5528 100:$1.6061 25:$1.7304 10:$1.9226 1:$2.4073
FDMD8240LET40 DISTI # V72:2272_16119251	ON Semiconductor	Trans MOSFET N-CH 40V 24A 12-Pin PQFN EP T/R	2053	1000:$1.2420 500:$1.3570 250:$1.5080 100:$1.6750 25:$1.8430 10:$2.0470 1:$2.5707
FDMD8240L DISTI # V36:1790_16119250	ON Semiconductor	Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R	0
FDMD8240LET40 DISTI # V36:1790_16119251	ON Semiconductor	Trans MOSFET N-CH 40V 24A 12-Pin PQFN EP T/R	0
FDMD8240LET40 DISTI # FDMD8240LET40CT-ND	ON Semiconductor	MOSFET 2N-CH 40V 24A POWER3.3X5 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2970In Stock	1000:$1.4586 500:$1.7603 100:$2.1426 10:$2.6660 1:$2.9700
FDMD8240LET40 DISTI # FDMD8240LET40DKR-ND	ON Semiconductor	MOSFET 2N-CH 40V 24A POWER3.3X5 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2970In Stock	1000:$1.4586 500:$1.7603 100:$2.1426 10:$2.6660 1:$2.9700
FDMD8240L DISTI # FDMD8240LCT-ND	ON Semiconductor	MOSFET 2N-CH 40V 23A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2323In Stock	1000:$1.3601 500:$1.6415 100:$1.9979 10:$2.4860 1:$2.7700
FDMD8240L DISTI # FDMD8240LDKR-ND	ON Semiconductor	MOSFET 2N-CH 40V 23A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2323In Stock	1000:$1.3601 500:$1.6415 100:$1.9979 10:$2.4860 1:$2.7700
FDMD8240L DISTI # FDMD8240LTR-ND	ON Semiconductor	MOSFET 2N-CH 40V 23A RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$1.2142 3000:$1.2294
FDMD8240LET40 DISTI # FDMD8240LET40TR-ND	ON Semiconductor	MOSFET 2N-CH 40V 24A POWER3.3X5 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$1.3021 3000:$1.3184
FDMD8240L DISTI # 26623751	ON Semiconductor	Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R	6000	3000:$1.1682
FDMD8240LET40 DISTI # 30705612	ON Semiconductor	Trans MOSFET N-CH 40V 24A 12-Pin PQFN EP T/R	3000	3000:$1.2375
FDMD8240L DISTI # 25810611	ON Semiconductor	Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R	2430	1000:$1.2926 500:$1.5356 250:$1.6693 100:$1.7266 25:$1.8602 10:$2.0668 6:$2.5878
FDMD8240LET40 DISTI # 25924331	ON Semiconductor	Trans MOSFET N-CH 40V 24A 12-Pin PQFN EP T/R	2053	1000:$1.3352 500:$1.4588 250:$1.6211 100:$1.8006 25:$1.9812 10:$2.2005 6:$2.7635
FDMD8240L DISTI # FDMD8240L	ON Semiconductor	MOS Power Transistors LV ( 41V-100V) - Tape and Reel (Alt: FDMD8240L) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.0699 18000:$1.0969 12000:$1.1109 6000:$1.1259 3000:$1.1329
FDMD8240LET40 DISTI # FDMD8240LET40	ON Semiconductor	Trans MOSFET N-CH 40V 24A 12-Pin PQFN T/R - Tape and Reel (Alt: FDMD8240LET40) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	12000:$1.0900 18000:$1.0900 30000:$1.0900 3000:$1.1900 6000:$1.1900
FDMD8240L DISTI # 84Y5826	ON Semiconductor	MOSFET, DUAL N-CH, 40V, 98A, PQFN-12L,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	2258	1000:$1.2700 500:$1.5400 250:$1.6500 100:$1.7600 50:$1.9000 25:$2.0500 10:$2.1900 1:$2.5900
FDMD8240LET40 DISTI # 84Y5827	ON Semiconductor	MOSFET, DUAL N-CH, 40V, 103A, PQFN-12L,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:103A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,PowerRoHS Compliant: Yes	872	1000:$1.3500 500:$1.6400 250:$1.7600 100:$1.8800 50:$2.0300 25:$2.1900 10:$2.3400 1:$2.7600
FDMD8240L DISTI # 512-FDMD8240L	ON Semiconductor	MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET RoHS: Compliant	2243	1:$2.5600 10:$2.1700 100:$1.7400 500:$1.5200 1000:$1.2600 3000:$1.1800 6000:$1.1300
FDMD8240LET40 DISTI # 512-FDMD8240LET40	ON Semiconductor	MOSFET 40V 103 A Dual NChnl Power Trench MOSFET RoHS: Compliant	1763	1:$2.7300 10:$2.3200 100:$1.8600 500:$1.6200 1000:$1.3400 3000:$1.2500 6000:$1.2100
FDMD8240L DISTI # 2565202	ON Semiconductor	MOSFET, DUAL N-CH, 40V, 98A, PQFN-12L	2258	500:£1.1800 250:£1.2800 100:£1.3600 10:£1.6900 1:£2.2500
FDMD8240LET40 DISTI # 2565203	ON Semiconductor	MOSFET, DUAL N-CH, 40V, 103A, PQFN-12L	872	500:£1.2600 250:£1.3700 100:£1.4600 10:£1.8300 1:£2.4200
FDMD8240L DISTI # 2565202	ON Semiconductor	MOSFET, DUAL N-CH, 40V, 98A, PQFN-12L RoHS: Compliant	2258	1000:$2.1900 500:$2.6400 100:$3.3800 10:$4.2100 1:$4.6600
FDMD8240LET40 DISTI # 2565203	ON Semiconductor	MOSFET, DUAL N-CH, 40V, 103A, PQFN-12L RoHS: Compliant	872	1000:$2.3400 500:$2.8200 100:$3.6300 10:$4.5100 1:$4.9900

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Disponibilidad

Valores:: Available
En orden:: 1984
Ingrese la cantidad:

El precio actual de FDMD8240L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~2,56 US$~~; ~~2,56 US$~~

10: ~~2,17 US$~~; ~~21,70 US$~~

100: ~~1,74 US$~~; ~~174,00 US$~~

500: ~~1,52 US$~~; ~~760,00 US$~~

1000: ~~1,26 US$~~; ~~1 260,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FDMD8240L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes