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IRFH5110TRPBF

IRFH5110TRPBF
Mfr. #:
IRFH5110TRPBF
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH5110TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
PQFN-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
114 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6.4 ns
Hora de levantarse
9.6 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
63 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
12.4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
22 ns
Tiempo de retardo de encendido típico
7.8 ns
Qg-Gate-Charge
48 nC
Modo de canal
Mejora
Tags
IRFH511, IRFH51, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRFH5110TRPBF
DISTI # 33598714		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin PQFN EP T/R4000
  • 4000:$0.5560
IRFH5110TRPBF
DISTI # IRFH5110TRPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 11A 8-PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.6314
IRFH5110TRPBF
DISTI # V36:1790_13890295		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin PQFN EP T/R0
    IRFH5110TRPBF
    DISTI # IRFH5110TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel (Alt: IRFH5110TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 40000:$0.4159
    • 24000:$0.4239
    • 16000:$0.4389
    • 8000:$0.4549
    • 4000:$0.4719
    IRFH5110TRPBF
    DISTI # IRFH5110TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin QFN T/R (Alt: IRFH5110TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Asia - 0
      IRFH5110TRPBF
      DISTI # SP001560340      		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin QFN T/R (Alt: SP001560340)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel      		Europe - 0
      • 40000:€0.4299
      • 24000:€0.4629
      • 16000:€0.5009
      • 8000:€0.5469
      • 4000:€0.6679
      IRFH5110TRPBF
      DISTI # 91Y4693      		Infineon Technologies AGMOSFET, N-CH, 100V, 63A, PQFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes11000
      • 1000:$0.6210
      • 500:$0.7880
      • 250:$0.8390
      • 100:$0.8910
      • 50:$0.9780
      • 25:$1.0600
      • 10:$1.1500
      • 1:$1.3500
      IRFH5110TRPBF
      DISTI # 70019272      		Infineon Technologies AGMOSFET 100V,Gen 10.7,11.68 mOhm max,56.2 nC Qg
      RoHS: Compliant      		0
      • 4000:$2.1700
      • 8000:$2.1270
      • 20000:$2.0620
      • 40000:$1.9750
      • 100000:$1.8450
      IRFH5110TRPBF
      DISTI # 942-IRFH5110TRPBF      		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
      RoHS: Compliant      		2601
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8820
      • 500:$0.7800
      • 1000:$0.6150
      • 4000:$0.5460
      • 8000:$0.5250
      IRFH5110TRPBF
      DISTI # 2580005      		Infineon Technologies AGMOSFET, N-CH, 100V, 63A, PQFN-8
      RoHS: Compliant      		8000
      • 100:$1.4400
      • 10:$1.7600
      • 1:$2.0300
      IRFH5110TRPBF
      DISTI # 2580005      		Infineon Technologies AGMOSFET, N-CH, 100V, 63A, PQFN-88000
      • 100:£0.8500
      • 25:£1.1000
      • 5:£1.2200
      Imagen Parte # Descripción
      IRFH5110TRPBF

      Mfr.#: IRFH5110TRPBF

      OMO.#: OMO-IRFH5110TRPBF

      		 MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
      IRFH5106TRPBF

      Mfr.#: IRFH5106TRPBF

      OMO.#: OMO-IRFH5106TRPBF

      		 MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC
      IRFH5106TR2PBF

      Mfr.#: IRFH5106TR2PBF

      OMO.#: OMO-IRFH5106TR2PBF

      		 MOSFET MOSFT 60V Gen 10.7 4.98mOhm 56.2nC Qg
      IRFH5106TRPBF.

      Mfr.#: IRFH5106TRPBF.

      OMO.#: OMO-IRFH5106TRPBF--1190

      		 Nuevo y original
      IRFH5110TRPBF.

      Mfr.#: IRFH5110TRPBF.

      OMO.#: OMO-IRFH5110TRPBF--1190

      		 Nuevo y original
      IRFH5110TR2PBF

      Mfr.#: IRFH5110TR2PBF

      OMO.#: OMO-IRFH5110TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 5X6 PQFN
      IRFH5106TRPBF

      Mfr.#: IRFH5106TRPBF

      OMO.#: OMO-IRFH5106TRPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC
      IRFH5104TR2PBF

      Mfr.#: IRFH5104TR2PBF

      OMO.#: OMO-IRFH5104TR2PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 40V 100A 3.5mOhm 53nC Qg
      IRFH5104TRPBF

      Mfr.#: IRFH5104TRPBF

      OMO.#: OMO-IRFH5104TRPBF-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 3.5mOhms 53nC
      IRFH5110TRPBF

      Mfr.#: IRFH5110TRPBF

      OMO.#: OMO-IRFH5110TRPBF-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de IRFH5110TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,62 US$
      0,62 US$
      10
      0,59 US$
      5,93 US$
      100
      0,56 US$
      56,15 US$
      500
      0,53 US$
      265,15 US$
      1000
      0,50 US$
      499,10 US$
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