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| PartNumber | IRFH5110TRPBF | IRFH5110TRPBF. | IRFH5110TR2PBF |
| Description | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | MOSFET N-CH 100V 5X6 PQFN | |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 63 A | - | - |
| Rds On Drain Source Resistance | 12.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 48 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 114 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.6 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | - | - |
| Typical Turn On Delay Time | 7.8 ns | - | - |
| Part # Aliases | SP001560340 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFH5110TRPBF | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | |
| IRFH5110TR2PBF | MOSFET N-CH 100V 5X6 PQFN | ||
| IRFH5110TRPBF | RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | ||
| IRFH5110TRPBF. | Nuevo y original |