IRFH5104TRPBF

IRFH5104TRPBF
Mfr. #:
IRFH5104TRPBF
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 3.5mOhms 53nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH5104TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5104TRPBF DatasheetIRFH5104TRPBF Datasheet (P4-P6)IRFH5104TRPBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Rectificador internacional
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
PQFN-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
114 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Resistencia a la fuente de desagüe de Rds
3.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
20 ns
Tiempo de retardo de encendido típico
9.5 ns
Qg-Gate-Charge
53 nC
Modo de canal
Mejora
Tags
IRFH510, IRFH51, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***ark
N CH MOSFET, 40V, 24A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:8 ;RoHS Compliant: Yes
***ineon
Benefits: Low RDSon (less than 3.5mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 1.1C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
Parte # Mfg. Descripción Valores Precio
IRFH5104TRPBF
DISTI # IRFH5104TRPBF-ND
Infineon Technologies AGMOSFET N-CH 40V 24A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRFH5104TRPBF
    DISTI # 942-IRFH5104TRPBF
    Infineon Technologies AGMOSFET 40V 1 N-CH HEXFET 3.5mOhms 53nC
    RoHS: Compliant
    0
      IRFH5104TRPBFInternational Rectifier 
      RoHS: Compliant
      Europe - 4000
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        RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 3.5mOhms 53nC
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        Mfr.#: IRFH5110TRPBF

        OMO.#: OMO-IRFH5110TRPBF-INFINEON-TECHNOLOGIES

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        Disponibilidad
        Valores:
        Available
        En orden:
        4500
        Ingrese la cantidad:
        El precio actual de IRFH5104TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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