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IPB123N10N3GATMA1

IPB123N10N3GATMA1
Mfr. #:
IPB123N10N3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 58A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB123N10N3GATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPB123N10
embalaje
Carrete
Alias ​​de parte
G IPB123N10N3 IPB123N10N3GXT SP000485968
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
94 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
58 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.7 V
Resistencia a la fuente de desagüe de Rds
10.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
24 ns
Tiempo de retardo de encendido típico
14 ns
Qg-Gate-Charge
26 nC
Transconductancia directa-Mín.
57 S
Modo de canal
Mejora
Tags
IPB123N10N3, IPB123, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descripción Valores Precio
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$0.8953
IPB123N10N3GXT
DISTI # IPB123N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8079
  • 2000:$0.7789
  • 4000:$0.7509
  • 6000:$0.7259
  • 10000:$0.7129
IPB123N10N3GATMA1
DISTI # 85X6018		Infineon Technologies AGMOSFET Transistor, N Channel, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V RoHS Compliant: Yes430
  • 500:$0.9830
  • 250:$1.0600
  • 100:$1.1300
  • 50:$1.2200
  • 25:$1.3200
  • 10:$1.4100
  • 1:$1.6600
IPB123N10N3 G
DISTI # 726-IPB123N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant		980
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 726-IPB123N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant		85
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 8269036P		Infineon Technologies AGMOSFET N-CH 58A 100V OPTIMOS3 TO263, RL360
  • 200:£0.9720
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,58A,94W,PG-TO263-3176
  • 1:$0.5200
  • 3:$0.5133
IPB123N10N3GATMA1
DISTI # 2443384RL		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		0
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
IPB123N10N3GATMA1
DISTI # 2443384		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		430
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
IPB123N10N3GATMA1
DISTI # 2443384		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		440
  • 500:£0.7930
  • 250:£0.8520
  • 100:£0.9110
  • 25:£1.1400
  • 5:£1.3100
Imagen Parte # Descripción
IPB123N10N3 G

Mfr.#: IPB123N10N3 G

OMO.#: OMO-IPB123N10N3-G

 MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPB123N10N3GATMA1

Mfr.#: IPB123N10N3GATMA1

OMO.#: OMO-IPB123N10N3GATMA1

 MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPB123N10N3GATMA1-CUT TAPE

Mfr.#: IPB123N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB123N10N3GATMA1-CUT-TAPE-1190

 Nuevo y original
IPB123N10N

Mfr.#: IPB123N10N

OMO.#: OMO-IPB123N10N-1190

 Nuevo y original
IPB123N10N3G

Mfr.#: IPB123N10N3G

OMO.#: OMO-IPB123N10N3G-1190

 Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968)
IPB123N10N3GATMA1

Mfr.#: IPB123N10N3GATMA1

OMO.#: OMO-IPB123N10N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 58A TO263-3
IPB123N10N3GS

Mfr.#: IPB123N10N3GS

OMO.#: OMO-IPB123N10N3GS-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de IPB123N10N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,77 US$
0,77 US$
10
0,73 US$
7,32 US$
100
0,69 US$
69,30 US$
500
0,65 US$
327,25 US$
1000
0,62 US$
616,00 US$
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