OMO ElectronicOMO Electronic
Expand menu
0 Carro

IPB123N10N

IPB123N10N
Mfr. #:
IPB123N10N
Fabricante:
Infineon Technologies
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB123N10N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
IPB123N10N3GATMA1 IPB123N10N3GXT SP000485968
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
94 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
58 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.7 V
Resistencia a la fuente de desagüe de Rds
12.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
24 ns
Tiempo de retardo de encendido típico
14 ns
Qg-Gate-Charge
26 nC
Transconductancia directa-Mín.
57 S 29 S
Modo de canal
Mejora
Tags
IPB123, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IPB123N10N3GATMA1
DISTI # V36:1790_06383732		Infineon Technologies AGTrans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3000
  • 10000:$0.6925
  • 5000:$0.7184
  • 2000:$0.7443
  • 1000:$0.7951
IPB123N10N3GATMA1
DISTI # V72:2272_06383732		Infineon Technologies AGTrans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		171
  • 100:$1.0618
  • 25:$1.2012
  • 10:$1.2981
  • 1:$1.5008
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$0.8953
IPB123N10N3GATMA1
DISTI # 31061946		Infineon Technologies AGTrans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3000
  • 10000:$0.7444
  • 5000:$0.7723
  • 2000:$0.8001
  • 1000:$0.8547
IPB123N10N3 G
DISTI # 30577666		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263
RoHS: Compliant		2332
  • 200:$1.2750
  • 100:$1.2877
  • 50:$1.3642
  • 12:$1.6830
IPB123N10N3GATMA1
DISTI # 32400641		Infineon Technologies AGTrans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7584
IPB123N10N3GATMA1
DISTI # 32380848		Infineon Technologies AGTrans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.0853
IPB123N10N3GATMA1
DISTI # 26195261		Infineon Technologies AGTrans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		171
  • 100:$1.1414
  • 25:$1.2913
  • 10:$1.3955
  • 9:$1.6134
IPB123N10N3G
DISTI # SP000485968		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 14460
  • 1000:€1.2129
  • 2000:€1.0179
  • 4000:€0.8499
  • 6000:€0.7399
  • 10000:€0.6929
IPB123N10N3G
DISTI # IPB123N10N3G		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R - Bulk (Alt: IPB123N10N3G)
RoHS: Compliant
Min Qty: 481
Container: Bulk		Americas - 0
  • 481:$0.7339
  • 483:$0.7079
  • 964:$0.6819
  • 2405:$0.6589
  • 4810:$0.6479
IPB123N10N3G
DISTI # SP000485968		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.0169
  • 2000:€0.8319
  • 4000:€0.7629
  • 6000:€0.7039
  • 10000:€0.6539
IPB123N10N3GXT
DISTI # IPB123N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8079
  • 2000:$0.7789
  • 4000:$0.7509
  • 6000:$0.7259
  • 10000:$0.7129
IPB123N10N3GATMA1
DISTI # 85X6018		Infineon Technologies AGMOSFET Transistor, N Channel, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V RoHS Compliant: Yes93
  • 500:$0.9830
  • 250:$1.0500
  • 100:$1.1200
  • 50:$1.2100
  • 25:$1.3100
  • 10:$1.4000
  • 1:$1.6500
IPB123N10N3 G
DISTI # 726-IPB123N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant		2769
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 726-IPB123N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant		735
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1Infineon Technologies AGIPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
RoHS: Compliant		1000Reel
  • 1000:$0.7750
IPB123N10N3GInfineon Technologies AGPower Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		564
  • 1000:$0.6700
  • 500:$0.7100
  • 100:$0.7400
  • 25:$0.7700
  • 1:$0.8300
IPB123N10N3GATMA1
DISTI # 8269036P		Infineon Technologies AGMOSFET N-CH 58A 100V OPTIMOS3 TO263, RL340
  • 200:£0.9720
IPB123N10N3 G
DISTI # TMOSP10369		Infineon Technologies AGN-CH 100V58A12mOhm TO263-3
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$1.1300
  • 2000:$1.0638
  • 3000:$0.9027
  • 4000:$0.8543
IPB123N10N3GATMA1
DISTI # 2443384RL		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		0
  • 5000:$1.1000
  • 2000:$1.1400
  • 1000:$1.2300
  • 500:$1.4800
  • 100:$1.6900
  • 10:$2.1100
  • 1:$2.4900
IPB123N10N3GATMA1
DISTI # 2443384		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		98
  • 5000:$1.1000
  • 2000:$1.1400
  • 1000:$1.2300
  • 500:$1.4800
  • 100:$1.6900
  • 10:$2.1100
  • 1:$2.4900
IPB123N10N3GATMA1
DISTI # 2443384		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		98
  • 500:£0.7650
  • 250:£0.8180
  • 100:£0.8710
  • 25:£1.0900
  • 5:£1.1900
IPB123N10N3GATMA1
DISTI # XSFP00000127191		Infineon Technologies AGCeramic Capacitor, Multilayer, Ceramic,16V,X7S,-/+22% TC, 10uF, 0805
RoHS: Compliant		3000 in Stock0 on Order
  • 3000:$0.8611
  • 1000:$0.9118
IPB123N10N3G
DISTI # XSKDRABV0033039		Infineon Technologies AG 
RoHS: Compliant		11460 in Stock0 on Order
  • 11460:$1.1456
  • 1000:$1.2240
Imagen Parte # Descripción
IPB120P04P404ATMA1

Mfr.#: IPB120P04P404ATMA1

OMO.#: OMO-IPB120P04P404ATMA1

 MOSFET P-CHANNEL
IPB120N04S4-02(4N0402)

Mfr.#: IPB120N04S4-02(4N0402)

OMO.#: OMO-IPB120N04S4-02-4N0402--1190

 Nuevo y original
IPB120N06S4H1ATMA1

Mfr.#: IPB120N06S4H1ATMA1

OMO.#: OMO-IPB120N06S4H1ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB12CN10LG

Mfr.#: IPB12CN10LG

OMO.#: OMO-IPB12CN10LG-1190

 Nuevo y original
IPB12CNE8NG

Mfr.#: IPB12CNE8NG

OMO.#: OMO-IPB12CNE8NG-1190

 Nuevo y original
IPB120N06S4-02

Mfr.#: IPB120N06S4-02

OMO.#: OMO-IPB120N06S4-02-124

 Darlington Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
IPB120N10S405ATMA1

Mfr.#: IPB120N10S405ATMA1

OMO.#: OMO-IPB120N10S405ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 100+
IPB120N04S4L02ATMA1

Mfr.#: IPB120N04S4L02ATMA1

OMO.#: OMO-IPB120N04S4L02ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 30/40V
IPB120N06S402ATMA2

Mfr.#: IPB120N06S402ATMA2

OMO.#: OMO-IPB120N06S402ATMA2-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
IPB120N06S4-03

Mfr.#: IPB120N06S4-03

OMO.#: OMO-IPB120N06S4-03-317

 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de IPB123N10N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Empezar con
Top