PartNumber | IPB123N10N3 G | IPB123N10N3GATMA1 | IPB123N10N3G |
Description | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968) |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 58 A | 58 A | - |
Rds On Drain Source Resistance | 10.7 mOhms | 10.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 35 nC | 35 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 94 W | 94 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | XPB123N10 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 29 S | 29 S | - |
Fall Time | 5 ns | 5 ns | 5 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 8 ns | 8 ns |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 24 ns | 24 ns | 24 ns |
Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
Part # Aliases | IPB123N10N3GATMA1 IPB123N1N3GXT SP000485968 | G IPB123N10N3 IPB123N1N3GXT SP000485968 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Part Aliases | - | - | G IPB123N10N3 IPB123N10N3GXT SP000485968 |
Package Case | - | - | TO-263-3 |
Pd Power Dissipation | - | - | 94 W |
Vgs Gate Source Voltage | - | - | +/- 20 V |
Id Continuous Drain Current | - | - | 58 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.7 V |
Rds On Drain Source Resistance | - | - | 10.7 mOhms |
Qg Gate Charge | - | - | 26 nC |
Forward Transconductance Min | - | - | 57 S |