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IPB123N10N3GATMA1

IPB123N10N3GATMA1
Mfr. #:
IPB123N10N3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB123N10N3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
58 A
Rds On - Resistencia de la fuente de drenaje:
10.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
35 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
94 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
29 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
G IPB123N10N3 IPB123N1N3GXT SP000485968
Unidad de peso:
0.139332 oz
Tags
IPB123N10N3, IPB123, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descripción Valores Precio
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$0.8953
IPB123N10N3GXT
DISTI # IPB123N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8079
  • 2000:$0.7789
  • 4000:$0.7509
  • 6000:$0.7259
  • 10000:$0.7129
IPB123N10N3GATMA1
DISTI # 85X6018		Infineon Technologies AGMOSFET Transistor, N Channel, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V RoHS Compliant: Yes430
  • 500:$0.9830
  • 250:$1.0600
  • 100:$1.1300
  • 50:$1.2200
  • 25:$1.3200
  • 10:$1.4100
  • 1:$1.6600
IPB123N10N3 G
DISTI # 726-IPB123N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant		980
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 726-IPB123N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant		85
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 8269036P		Infineon Technologies AGMOSFET N-CH 58A 100V OPTIMOS3 TO263, RL360
  • 200:£0.9720
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,58A,94W,PG-TO263-3176
  • 1:$0.5200
  • 3:$0.5133
IPB123N10N3GATMA1
DISTI # 2443384RL		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		0
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
IPB123N10N3GATMA1
DISTI # 2443384		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		430
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
IPB123N10N3GATMA1
DISTI # 2443384		Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant		440
  • 500:£0.7930
  • 250:£0.8520
  • 100:£0.9110
  • 25:£1.1400
  • 5:£1.3100
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IPB123N10N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,65 US$
1,65 US$
10
1,40 US$
14,00 US$
100
1,12 US$
112,00 US$
500
0,98 US$
491,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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