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IPB80N06S2LH5ATMA4

IPB80N06S2LH5ATMA4
Mfr. #:
IPB80N06S2LH5ATMA4
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CHANNEL_55/60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB80N06S2LH5ATMA4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S2LH5ATMA4 DatasheetIPB80N06S2LH5ATMA4 Datasheet (P4-P6)IPB80N06S2LH5ATMA4 Datasheet (P7-P8)
ECAD Model:
Más información:
IPB80N06S2LH5ATMA4 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
IPB80N06S2L-H5 SP001058126
Unidad de peso:
0.139332 oz
Tags
IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB80N06S2LH5ATMA4
DISTI # V72:2272_06383493		Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB80N06S2LH5ATMA4
    DISTI # V36:1790_06383493    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000:$1.4550
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4-ND    		Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$1.3096
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2LH5ATMA4)
    Min Qty: 313
    Container: Bulk    		Americas - 0
    • 3130:$1.0159
    • 1565:$1.0339
    • 939:$1.0699
    • 626:$1.1109
    • 313:$1.1519
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2LH5ATMA4)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$1.4900
    • 4000:$1.5900
    • 6000:$1.5900
    • 2000:$1.6900
    • 1000:$1.7900
    IPB80N06S2LH5ATMA4
    DISTI # 726-IPB80N06S2LH5AT4    		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
    RoHS: Compliant    		994
    • 1:$3.3000
    • 10:$2.8100
    • 100:$2.4300
    • 250:$2.3100
    • 500:$2.0700
    • 1000:$1.7400
    • 2000:$1.6600
    • 5000:$1.5900
    IPB80N06S2LH5ATMA4Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10000
    • 1000:$1.0500
    • 500:$1.1100
    • 100:$1.1500
    • 25:$1.2000
    • 1:$1.3000
    Imagen Parte # Descripción
    STTH5R06GY-TR

    Mfr.#: STTH5R06GY-TR

    OMO.#: OMO-STTH5R06GY-TR

    		 Rectifiers Auto Turbo 2 AECQ101 5A 600VR 1.5VF 35ns
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4

    		 MOSFET N-CHANNEL_55/60V
    IPD30N06S215ATMA2

    Mfr.#: IPD30N06S215ATMA2

    OMO.#: OMO-IPD30N06S215ATMA2

    		 MOSFET N-CHANNEL_55/60V
    BDP947H6327XTSA1

    Mfr.#: BDP947H6327XTSA1

    OMO.#: OMO-BDP947H6327XTSA1

    		 Bipolar Transistors - BJT AF TRANSISTORS
    IPD30N06S215ATMA2

    Mfr.#: IPD30N06S215ATMA2

    OMO.#: OMO-IPD30N06S215ATMA2-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 30A TO252-3
    BDP947H6327XTSA1

    Mfr.#: BDP947H6327XTSA1

    OMO.#: OMO-BDP947H6327XTSA1-INFINEON-TECHNOLOGIES

    		 TRANS NPN 45V 3A SOT223
    C0402C102J5RAC7411

    Mfr.#: C0402C102J5RAC7411

    OMO.#: OMO-C0402C102J5RAC7411-1190

    		 CAP, 1000PF, 50V, MLCC, 0402
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 30A TO252-3
    STTH5R06GY-TR

    Mfr.#: STTH5R06GY-TR

    OMO.#: OMO-STTH5R06GY-TR-STMICROELECTRONICS

    		 Rectifiers Auto Turbo 2 AECQ101 5A 600VR 1.5VF 35ns
    Disponibilidad
    Valores:
    994
    En orden:
    2977
    Ingrese la cantidad:
    El precio actual de IPB80N06S2LH5ATMA4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,30 US$
    3,30 US$
    10
    2,81 US$
    28,10 US$
    100
    2,43 US$
    243,00 US$
    250
    2,31 US$
    577,50 US$
    500
    2,07 US$
    1 035,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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