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HGT1S12N60A4DS

HGT1S12N60A4DS
Mfr. #:
HGT1S12N60A4DS
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 12A 600V N-Ch
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGT1S12N60A4DS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
E
Tecnología:
Si
Paquete / Caja:
TO-263AB-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.7 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
54 A
Pd - Disipación de energía:
167 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HGT1S12N60A4DS
Embalaje:
Tubo
Corriente continua de colector Ic Max:
54 A
Altura:
4.83 mm
Longitud:
10.67 mm
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
60 A
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
800
Subcategoría:
IGBT
Parte # Alias:
HGT1S12N60A4DS_NL
Unidad de peso:
0.046296 oz
Tags
HGT1S12N60A4D, HGT1S12N60A, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) D2PAK Rail
***ure Electronics
HGT1S12N60A4DS Series 600 V 54 A SMT N-Channel IGBT - TO-263AB
***ter Electronics
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfas
***et Europe
Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail
***et
PWR IGBT 12A,600V,SMPS SERIES N-CH W/DIODE TO-263AB
***i-Key
IGBT SMPS N-CH 600V D2PAK
***ser
IGBTs 12A, 600V, N-Ch
***Semiconductor
600V, SMPS IGBT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:TO-263AB ;RoHS Compliant: Yes
***rchild Semiconductor
The HGT1S12N60A4DS combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Parte # Mfg. Descripción Valores Precio
HGT1S12N60A4DS
DISTI # 28995997		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Rail8000
  • 800:$3.4971
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS-ND		ON SemiconductorIGBT 600V 54A 167W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$3.2713
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail (Alt: HGT1S12N60A4DS)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.8900
  • 500:€1.9900
  • 100:€2.0900
  • 50:€2.1900
  • 25:€2.2900
  • 10:€2.3900
  • 1:€2.5900
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S12N60A4DS)
RoHS: Compliant
Min Qty: 92
Container: Bulk		Americas - 0
  • 920:$3.2900
  • 276:$3.3900
  • 460:$3.3900
  • 92:$3.4900
  • 184:$3.4900
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S12N60A4DS)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 4800:$2.4900
  • 8000:$2.4900
  • 800:$2.5900
  • 1600:$2.5900
  • 3200:$2.5900
HGT1S12N60A4DS
DISTI # 95B2571		ON SemiconductorSINGLE IGBT, 600V, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
  • 500:$2.4400
  • 250:$2.5200
  • 100:$3.0100
  • 50:$3.4800
  • 25:$3.7000
  • 10:$4.2300
  • 1:$4.8800
HGT1S12N60A4DS
DISTI # 512-HGT1S12N60A4DS		ON SemiconductorIGBT Transistors 12A 600V N-Ch
RoHS: Compliant		0
    HGT1S12N60A4DSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		2395
    • 1000:$3.5800
    • 500:$3.7700
    • 100:$3.9200
    • 25:$4.0900
    • 1:$4.4100
    Imagen Parte # Descripción
    HGT1S12N60A4S9A

    Mfr.#: HGT1S12N60A4S9A

    OMO.#: OMO-HGT1S12N60A4S9A

    		 IGBT Transistors 600V N-Channel IGBT SMPS Series
    HGT1S12N60A4DS

    Mfr.#: HGT1S12N60A4DS

    OMO.#: OMO-HGT1S12N60A4DS

    		 IGBT Transistors 12A 600V N-Ch
    HGT1S12N60A4DS

    Mfr.#: HGT1S12N60A4DS

    OMO.#: OMO-HGT1S12N60A4DS-ON-SEMICONDUCTOR

    		 IGBT 600V 54A 167W D2PAK
    HGT1S12N60A4S9A

    Mfr.#: HGT1S12N60A4S9A

    OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

    		 IGBT 600V 54A 167W TO263AB
    HGT1S12N60B3D

    Mfr.#: HGT1S12N60B3D

    OMO.#: OMO-HGT1S12N60B3D-1190

    		 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S12N60B3DS

    Mfr.#: HGT1S12N60B3DS

    OMO.#: OMO-HGT1S12N60B3DS-1190

    		 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S12N60B3G

    Mfr.#: HGT1S12N60B3G

    OMO.#: OMO-HGT1S12N60B3G-1190

    		 Nuevo y original
    HGT1S12N60C3DS9A

    Mfr.#: HGT1S12N60C3DS9A

    OMO.#: OMO-HGT1S12N60C3DS9A-1190

    		 Nuevo y original
    HGT1S12N60C3DST

    Mfr.#: HGT1S12N60C3DST

    OMO.#: OMO-HGT1S12N60C3DST-1190

    		 Nuevo y original
    HGT1S12N60C3S9AR4501

    Mfr.#: HGT1S12N60C3S9AR4501

    OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de HGT1S12N60A4DS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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