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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| HGT1S12N60A4DS DISTI # 28995997 | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Rail | 8000 |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS-ND | ON Semiconductor | IGBT 600V 54A 167W D2PAK RoHS: Compliant Min Qty: 800 Container: Tube | Limited Supply - Call |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 1 | Europe - 0 |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 92 Container: Bulk | Americas - 0 |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
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| HGT1S12N60A4DS DISTI # 95B2571 | ON Semiconductor | SINGLE IGBT, 600V, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes | 0 |
|
| HGT1S12N60A4DS DISTI # 512-HGT1S12N60A4DS | ON Semiconductor | IGBT Transistors 12A 600V N-Ch RoHS: Compliant | 0 | |
| HGT1S12N60A4DS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 2395 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: HGT1S12N60A4S9A OMO.#: OMO-HGT1S12N60A4S9A |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGT1S12N60A4DS OMO.#: OMO-HGT1S12N60A4DS |
IGBT Transistors 12A 600V N-Ch |
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Mfr.#: HGT1S12N60A4DS |
IGBT 600V 54A 167W D2PAK |
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Mfr.#: HGT1S12N60A4S9A |
IGBT 600V 54A 167W TO263AB |
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Mfr.#: HGT1S12N60B3D OMO.#: OMO-HGT1S12N60B3D-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S12N60B3S OMO.#: OMO-HGT1S12N60B3S-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S12N60C3 OMO.#: OMO-HGT1S12N60C3-1190 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S12N60C3DS OMO.#: OMO-HGT1S12N60C3DS-37 |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) |
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Mfr.#: HGT1S12N60C3S OMO.#: OMO-HGT1S12N60C3S-1190 |
Nuevo y original |
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Mfr.#: HGT1S12N60C3S9AR4501 |
Nuevo y original |