HGT1S12N60C3DST

HGT1S12N60C3DST
Mfr. #:
HGT1S12N60C3DST
Fabricante:
ON Semiconductor
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGT1S12N60C3DST Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGT1S12N60C3D, HGT1S12N60C, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
HGT1S12N60C3DS
DISTI # HGT1S12N60C3DS
ON Semiconductor24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
RoHS: Not Compliant
Min Qty: 173
Container: Bulk
Americas - 0
  • 1730:$1.6900
  • 173:$1.7900
  • 346:$1.7900
  • 519:$1.7900
  • 865:$1.7900
HGT1S12N60C3DSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
565
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
Imagen Parte # Descripción
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S12N60A4D

Mfr.#: HGT1S12N60A4D

OMO.#: OMO-HGT1S12N60A4D-1190

Nuevo y original
HGT1S12N60A4DS

Mfr.#: HGT1S12N60A4DS

OMO.#: OMO-HGT1S12N60A4DS-ON-SEMICONDUCTOR

IGBT 600V 54A 167W D2PAK
HGT1S12N60A4DS9A

Mfr.#: HGT1S12N60A4DS9A

OMO.#: OMO-HGT1S12N60A4DS9A-1190

Nuevo y original
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO263AB
HGT1S12N60B3DS

Mfr.#: HGT1S12N60B3DS

OMO.#: OMO-HGT1S12N60B3DS-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60B3G

Mfr.#: HGT1S12N60B3G

OMO.#: OMO-HGT1S12N60B3G-1190

Nuevo y original
HGT1S12N60C3

Mfr.#: HGT1S12N60C3

OMO.#: OMO-HGT1S12N60C3-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60C3DST

Mfr.#: HGT1S12N60C3DST

OMO.#: OMO-HGT1S12N60C3DST-1190

Nuevo y original
HGT1S12N60C3S9A

Mfr.#: HGT1S12N60C3S9A

OMO.#: OMO-HGT1S12N60C3S9A-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de HGT1S12N60C3DST es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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1
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0,00 US$
10
0,00 US$
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100
0,00 US$
0,00 US$
500
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1000
0,00 US$
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