HGT1S12N60B3DS

HGT1S12N60B3DS
Mfr. #:
HGT1S12N60B3DS
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGT1S12N60B3DS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGT1S12N60B, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
French Electronic Distributor since 1988
***i-Key
27A, 600V, UFS N-CHANNEL IGBT W/
Parte # Mfg. Descripción Valores Precio
HGT1S12N60B3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
1100
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
Imagen Parte # Descripción
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S12N60A4D

Mfr.#: HGT1S12N60A4D

OMO.#: OMO-HGT1S12N60A4D-1190

Nuevo y original
HGT1S12N60A4DS9A

Mfr.#: HGT1S12N60A4DS9A

OMO.#: OMO-HGT1S12N60A4DS9A-1190

Nuevo y original
HGT1S12N60B3D

Mfr.#: HGT1S12N60B3D

OMO.#: OMO-HGT1S12N60B3D-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60B3DS

Mfr.#: HGT1S12N60B3DS

OMO.#: OMO-HGT1S12N60B3DS-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60B3G

Mfr.#: HGT1S12N60B3G

OMO.#: OMO-HGT1S12N60B3G-1190

Nuevo y original
HGT1S12N60B3S

Mfr.#: HGT1S12N60B3S

OMO.#: OMO-HGT1S12N60B3S-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60C3DS

Mfr.#: HGT1S12N60C3DS

OMO.#: OMO-HGT1S12N60C3DS-37

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
HGT1S12N60C3S

Mfr.#: HGT1S12N60C3S

OMO.#: OMO-HGT1S12N60C3S-1190

Nuevo y original
HGT1S12N60C3S9AR4501

Mfr.#: HGT1S12N60C3S9AR4501

OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de HGT1S12N60B3DS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,92 US$
1,92 US$
10
1,82 US$
18,24 US$
100
1,73 US$
172,80 US$
500
1,63 US$
816,00 US$
1000
1,54 US$
1 536,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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