| Mfr. #: | CSD86311W1723 |
|---|---|
| Fabricante: | Texas Instruments |
| Descripción: | Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | CSD86311W1723 Ficha de datos |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 12-UFBGA, DSBGA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 12-DSBGA (1.53x1.98) Configuration Dual Common Source This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 25V This product has an 585pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 4.5A continuous drain-ID current at 25°C; This product has an 39 mOhm @ 2A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 1.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.9 ns of 16 ns. This product has a 4.3 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 4.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 42 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13.2 ns This product has a 5.4 ns. Qg-Gate-Charge is 3.1 nC. This product features a 6.4 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD86311W1723 Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 12-UFBGA, DSBGA.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 2 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 12-DSBGA (1.53x1.98).
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual Common Source
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual)
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 25V
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 585pF @ 12.5V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 4.5A.
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 39 mOhm @ 2A, 8V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 1.5 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 2.9 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 4.3 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 10 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4.5 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 42 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 13.2 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 5.4 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 3.1 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 6.4 S