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SIHD9N60E-GE3

SIHD9N60E-GE3
Mfr. #:
SIHD9N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD9N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
SIHD9N60E-GE3 DatasheetSIHD9N60E-GE3 Datasheet (P4-P6)SIHD9N60E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHD9N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
320 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
26 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
31 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.011993 oz
Tags
SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 9A 3-Pin DPAK
***ment14 APAC
MOSFET, N-CH, 9A, 600V, TO-252
***ark
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.32Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3-ND		Vishay SiliconixMOSFET N-CHANNEL 600V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2990In Stock
  • 6000:$0.8586
  • 3000:$0.8916
  • 500:$1.1558
  • 100:$1.4068
  • 25:$1.6512
  • 10:$1.7500
  • 1:$1.9500
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK - Tape and Reel (Alt: SIHD9N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8059
  • 18000:$0.8279
  • 12000:$0.8519
  • 6000:$0.8879
  • 3000:$0.9149
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK (Alt: SIHD9N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8399
  • 500:€0.8629
  • 100:€0.8749
  • 50:€0.8889
  • 25:€1.0009
  • 10:€1.2139
  • 1:€1.7319
SIHD9N60E-GE3
DISTI # 78-SIHD9N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3021
  • 1:$1.9500
  • 10:$1.6200
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 3000:$0.8490
  • 6000:$0.8170
  • 9000:$0.7860
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-252
RoHS: Compliant		2913
  • 1000:$1.5400
  • 500:$1.8600
  • 100:$2.3900
  • 10:$2.9700
  • 1:$3.2800
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-2522927
  • 500:£0.8050
  • 250:£0.8590
  • 100:£0.9130
  • 10:£1.1800
  • 1:£1.4200
Imagen Parte # Descripción
FCD260N65S3

Mfr.#: FCD260N65S3

OMO.#: OMO-FCD260N65S3

 MOSFET SUPERFET3 260MOHM TO252
STD11N60DM2

Mfr.#: STD11N60DM2

OMO.#: OMO-STD11N60DM2

 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
FCD9N60NTM

Mfr.#: FCD9N60NTM

OMO.#: OMO-FCD9N60NTM

 MOSFET 600V N-Channel SupreMOS
STD18N55M5

Mfr.#: STD18N55M5

OMO.#: OMO-STD18N55M5

 MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS
FCD380N60E

Mfr.#: FCD380N60E

OMO.#: OMO-FCD380N60E

 MOSFET 600V N-Channel MOSFET
LM3478MMX/NOPB

Mfr.#: LM3478MMX/NOPB

OMO.#: OMO-LM3478MMX-NOPB

 Switching Controllers Hi Eff Lo-Side N-CH Cntlr
MMB02070C3307FB200

Mfr.#: MMB02070C3307FB200

OMO.#: OMO-MMB02070C3307FB200

 MELF Resistors 1watt .33ohms 1% 0207 MELF 350V 50ppm
FCD360N65S3R0

Mfr.#: FCD360N65S3R0

OMO.#: OMO-FCD360N65S3R0

 MOSFET SUPERFET3 650V 10A 360 mOhm
STD18N55M5

Mfr.#: STD18N55M5

OMO.#: OMO-STD18N55M5-STMICROELECTRONICS

 Darlington Transistors MOSFET N-Ch 550V 0.18 13A Mdmesh V Power MOS
STD11N60DM2

Mfr.#: STD11N60DM2

OMO.#: OMO-STD11N60DM2-STMICROELECTRONICS

 N-CHANNEL 600 V, 0.26 OHM TYP.,
Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de SIHD9N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,95 US$
1,95 US$
10
1,62 US$
16,20 US$
100
1,25 US$
125,00 US$
500
1,10 US$
550,00 US$
1000
0,91 US$
911,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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