FCD9N60NTM

Mfr. #:: FCD9N60NTM
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET 600V N-Channel SupreMOS
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FCD9N60NTM Ficha de datos
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: TO-252-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 600 V

Id - Corriente de drenaje continua:: 9 A

Rds On - Resistencia de la fuente de drenaje:: 330 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 5 V

Vgs - Voltaje puerta-fuente:: 30 V

Qg - Carga de puerta:: 17.8 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 92.6 W

Configuración:: Único

Nombre comercial:: SupreMOS

Embalaje:: Carrete

Altura:: 2.39 mm

Longitud:: 6.73 mm

Serie:: FCD9N60NTM

Tipo de transistor:: 1 N-Channel

Escribe:: MOSFET de canal N

Ancho:: 6.22 mm

Marca:: ON Semiconductor / Fairchild

Transconductancia directa - Mín .:: 5.3 S

Otoño:: 11.5 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 9.6 ns

Cantidad de paquete de fábrica:: 2500

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 28.7 ns

Tiempo típico de retardo de encendido:: 13.2 ns

Unidad de peso:: 0.009184 oz

Tags: FCD9N6, FCD9N, FCD9, FCD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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FCD9N60NTM Descripción

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK

*** Source Electronics: Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK

***r Electronics: Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package

***ment14 APAC: MOSFET, N-CH, 600V, 11A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Source Voltage Vds:600V; On Resistance

***roFlash: Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 600V, 11A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK

***Yang: Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Product that comes on tape, but is not reeled

***nell: MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5

*** Stop Electro: Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package

***ure Electronics: N-Channel 600 V 0.38 Ohm SMT FDmesh II Power Mosfet - DPAK

***nell: MOSFET, N-CH, 600V, 11A, 109W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 109W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***icroelectronics: N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

*** Source Electronics: MOSFET N-CH 600V 11A DPAK / Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK

***ure Electronics: N-Channel 600 V 0.6 Ohm Surface Mount SuperFET Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, 600V D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:7A; Package / Case:DPAK; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:21A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK

***ure Electronics: N-Channel 600 V 0.6 Ohm 30 nC Surface Mount SuperFET Mosfet -TO-252-3

***r Electronics: Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) FP 0.303 7.70mm Surface Mount Automotive CAP ALUM 100UF 20% 35V SMD

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FCD9N60NTM DISTI # V79:2366_23246337	ON Semiconductor	SUPREMOS 9A, IN D-PAK	1205	500:$1.1926 100:$1.2780 10:$1.5949 1:$2.0585
FCD9N60NTM DISTI # V72:2272_06337712	ON Semiconductor	SUPREMOS 9A, IN D-PAK	1201	1000:$0.9275 500:$1.0021 250:$1.1135 100:$1.2372 25:$1.4308 10:$1.5897 1:$2.0507
FCD9N60NTM DISTI # V36:1790_06337712	ON Semiconductor	SUPREMOS 9A, IN D-PAK	0	2500000:$0.7471 1250000:$0.7476 250000:$0.7965 25000:$0.8926 2500:$0.9092
FCD9N60NTM DISTI # FCD9N60NTMCT-ND	ON Semiconductor	MOSFET N-CH 600V 9A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3504In Stock	1000:$1.0058 500:$1.2139 100:$1.4775 10:$1.8380 1:$2.0500
FCD9N60NTM DISTI # FCD9N60NTMDKR-ND	ON Semiconductor	MOSFET N-CH 600V 9A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3504In Stock	1000:$1.0058 500:$1.2139 100:$1.4775 10:$1.8380 1:$2.0500
FCD9N60NTM DISTI # FCD9N60NTMTR-ND	ON Semiconductor	MOSFET N-CH 600V 9A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	5000:$0.8755 2500:$0.9092
FCD9N60NTM DISTI # 33066007	ON Semiconductor	SUPREMOS 9A, IN D-PAK	2500	2500:$1.3125
FCD9N60NTM DISTI # 33728979	ON Semiconductor	SUPREMOS 9A, IN D-PAK	2500	2500:$0.8556
FCD9N60NTM DISTI # 32380076	ON Semiconductor	SUPREMOS 9A, IN D-PAK	1205	6:$2.0585
FCD9N60NTM DISTI # 25921864	ON Semiconductor	SUPREMOS 9A, IN D-PAK	1201	8:$2.0507
FCD9N60NTM DISTI # FCD9N60NTM	ON Semiconductor	Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FCD9N60NTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 5000	5000:$0.1924 2500:$0.1926
FCD9N60NTM DISTI # FCD9N60NTM	ON Semiconductor	Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FCD9N60NTM) RoHS: Not Compliant Min Qty: 329 Container: Bulk	Americas - 0	3290:$0.9379 1645:$0.9619 987:$0.9739 658:$0.9869 329:$0.9929
FCD9N60NTM DISTI # FCD9N60NTM	ON Semiconductor	Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FCD9N60NTM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.7909 15000:$0.8109 10000:$0.8219 5000:$0.8319 2500:$0.8379
FCD9N60NTM DISTI # FCD9N60NTM	ON Semiconductor	Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FCD9N60NTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.7429 15000:€0.7959 10000:€0.8579 5000:€0.9289 2500:€1.1149
FCD9N60NTM DISTI # 92R5506	ON Semiconductor	Power MOSFET, N Channel, 9 A, 600 V, 0.33 ohm, 10 V, 3 V	0	25000:$0.8690 10000:$0.8980 2500:$0.9330 1:$0.9400
FCD9N60NTM DISTI # 41T0481	ON Semiconductor	MOSFET,N CHANNEL,600V,9A,DPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3Pins RoHS Compliant: Yes	3546	1000:$1.1000 500:$1.2900 250:$1.3700 100:$1.4500 50:$1.5600 25:$1.6700 10:$1.7800 1:$2.0600
FCD9N60NTM DISTI # 512-FCD9N60NTM	ON Semiconductor	MOSFET 600V N-Channel SupreMOS RoHS: Compliant	2876	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9290 2500:$0.8650 5000:$0.8330
FCD9N60NTM	ON Semiconductor	Single N-Channel 600 V 92.6 W 17.8 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant	2500Reel	2500:$0.8000
FCD9N60NTM	ON Semiconductor	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	2500	1000:$0.9300 500:$0.9800 100:$1.0200 25:$1.0700 1:$1.1500
FCD9N60NTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	54360	1000:$0.9300 500:$0.9800 100:$1.0200 25:$1.0700 1:$1.1500
FCD9N60NTM	Fairchild Semiconductor Corporation	9 A, 600 V, 0.385 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252	21	12:$1.8000 3:$2.2500 1:$2.7000
FCD9N60NTM DISTI # 7396128P	ON Semiconductor	SUPREMOS MOSFET N CHANNEL 600V 9A, RL	1358	5:£0.9000
FCD9N60NTM DISTI # 1885780	ON Semiconductor	MOSFET,N CH,600V,9A,DPAK RoHS: Compliant	3546	5000:$1.2900 2500:$1.3300 1000:$1.4300 500:$1.7300 100:$1.9700 10:$2.4600 1:$2.8900
FCD9N60NTM DISTI # 1885780RL	ON Semiconductor	MOSFET,N CH,600V,9A,DPAK RoHS: Compliant	0	5000:$1.2900 2500:$1.3300 1000:$1.4300 500:$1.7300 100:$1.9700 10:$2.4600 1:$2.8900
FCD9N60NTM DISTI # 1885780	ON Semiconductor	MOSFET,N CH,600V,9A,DPAK	4414	500:£0.8630 250:£0.9260 100:£0.9890 10:£1.2600 1:£1.6400
FCD9N60NTM DISTI # XSKDRABV0051313	ON SEMICONDUCTOR	RoHS: Compliant	7500 in Stock0 on Order	7500:$1.2000 2500:$1.2800

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Disponibilidad

Valores:: Available
En orden:: 1985
Ingrese la cantidad:

El precio actual de FCD9N60NTM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,88 US$~~; ~~1,88 US$~~

10: ~~1,60 US$~~; ~~16,00 US$~~

100: ~~1,28 US$~~; ~~128,00 US$~~

500: ~~1,12 US$~~; ~~560,00 US$~~

1000: ~~0,93 US$~~; ~~929,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FCD9N60NTM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes