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FCD380N60E

FCD380N60E
Mfr. #:
FCD380N60E
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V N-Channel MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCD380N60E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
10.2 A
Rds On - Resistencia de la fuente de drenaje:
380 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
34 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
106 W
Configuración:
Único
Nombre comercial:
SuperFET II
Embalaje:
Carrete
Altura:
2.39 mm
Longitud:
6.73 mm
Producto:
MOSFET
Serie:
FCD380N60E
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
10 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
64 ns
Tiempo típico de retardo de encendido:
17 ns
Unidad de peso:
0.009184 oz
Tags
FCD3, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
***ure Electronics
N-Channel 600 V 380 mO Surface Mount SuperFET II Easy Drive Mosfet -TO-252
***p One Stop Global
Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) TO-252 T/R
***ark
SuperFET2 380mohm, TO252 - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
***et Europe
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R
***Components
MOSFET N-Ch SuperFET II 600V 10.2A DPAK
***ical
Trans MOSFET N-CH 600V 10.2A T/R
***i-Key
MOSFET N CH 600V 10.2A DPAK
***et
SUPERFET2 380MOHM, TO252
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:106W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 600V 10,2A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.32ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:106W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
FCD380N60E
DISTI # V72:2272_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 1000:$0.8777
  • 500:$1.0141
  • 250:$1.1024
  • 100:$1.2248
  • 25:$1.5097
  • 10:$1.5301
  • 1:$1.9742
FCD380N60E
DISTI # V36:1790_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.8567
FCD380N60E
DISTI # FCD380N60ECT-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60EDKR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60ETR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 5000:$0.8408
  • 2500:$0.8732
FCD380N60E
DISTI # 32702549		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 9:$1.9742
FCD380N60E
DISTI # 32711099		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8219
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7139
  • 15000:€0.7649
  • 10000:€0.8239
  • 5000:€0.8919
  • 2500:€1.0709
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7599
  • 15000:$0.7789
  • 10000:$0.7889
  • 5000:$0.7999
  • 2500:$0.8049
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$1.0098
  • 62500:$1.0267
  • 25000:$1.0621
  • 12500:$1.1000
  • 7500:$1.1407
  • 5000:$1.1846
  • 2500:$1.2320
FCD380N60E
DISTI # 46AC0750		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2057
  • 1000:$1.0500
  • 500:$1.2400
  • 250:$1.3200
  • 100:$1.3900
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7000
  • 1:$1.9800
FCD380N60E
DISTI # 63W2839		ON SemiconductorSF2 600V 380MOHM E DPAK / REEL0
  • 25000:$0.6730
  • 10000:$0.6930
  • 2500:$0.7190
  • 1:$0.7250
FCD380N60E
DISTI # 512-FCD380N60E		ON SemiconductorMOSFET 600V N-Channel MOSFET
RoHS: Compliant		2416
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8930
  • 2500:$0.8800
FCD380N60EFairchild Semiconductor Corporation 828
    FCD380N60EFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		1998
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3
      RoHS: Compliant      		2057
      • 5000:$1.1700
      • 1000:$1.2100
      • 500:$1.3100
      • 250:$1.5900
      • 100:$1.9400
      • 25:$2.8400
      • 5:$3.3100
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-34577
      • 500:£0.8240
      • 250:£0.8840
      • 100:£0.9440
      • 10:£1.2200
      • 1:£1.5900
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      DP83TC811SWRNDRQ1

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      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de FCD380N60E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,81 US$
      1,81 US$
      10
      1,54 US$
      15,40 US$
      100
      1,23 US$
      123,00 US$
      500
      1,07 US$
      535,00 US$
      1000
      0,89 US$
      893,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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