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C2M0280120D

C2M0280120D
Mfr. #:
C2M0280120D
Fabricante:
N/A
Descripción:
MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
C2M0280120D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
C2M0280120D más información
Atributo del producto
Valor de atributo
Fabricante:
Cree, Inc.
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
280 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.8 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
5.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
62.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
Z-FET
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Velocidad de lobo / Cree
Transconductancia directa - Mín .:
2.8 S
Otoño:
9.9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.6 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
10.8 ns
Tiempo típico de retardo de encendido:
5.2 ns
Unidad de peso:
1.340411 oz
Tags
C2M0, C2M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D
***ark
Mosfet, N-Ch, 1.2Kv, 10A, To-247 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
***ment14 APAC
场效应管, MOSFET, N沟道, 1.2KV, 10A, TO-247;
***i-Key
MOSFET N-CH 1200V 10A TO-247-3
***hardson RFPD
SILICON CARBIDE MOSFETS
***nell
MOSFET, CA-N, 1,2KV, 10A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:62.5W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Parte # Mfg. Descripción Valores Precio
C2M0280120D
DISTI # V36:1790_06265415		Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant		170
  • 25:$4.3900
  • 10:$4.8750
  • 1:$5.9576
C2M0280120D
DISTI # V99:2348_06265415		Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant		86
  • 10:$4.8830
  • 1:$5.9576
C2M0280120D
DISTI # C2M0280120D-ND		WolfspeedMOSFET N-CH 1200V 10A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		16158In Stock
  • 100:$5.4131
  • 1:$5.4300
KIT8020-CRD-8FF1217P-1
DISTI # KIT8020-CRD-8FF1217P-1-ND		WolfspeedEVAL KIT PCB 2-MOSFET 2-SIC DRVR
RoHS: Not compliant
Min Qty: 1
Container: Box		144In Stock
  • 1:$248.7500
C2M0280120D
DISTI # 29424048		Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant		1043
  • 30:$4.8255
C2M0280120D
DISTI # 30990506		Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant		170
  • 2:$5.9576
C2M0280120D
DISTI # 30729731		Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant		86
  • 2:$5.9576
C2M0280120D
DISTI # 98Y6013		WolfspeedMOSFET, N-CH, 1.2KV, 10A, TO-247 ROHS COMPLIANT: YES15
  • 500:$5.0200
  • 250:$5.1500
  • 100:$5.2700
  • 50:$5.3300
  • 25:$5.5100
  • 10:$5.8200
  • 1:$6.1900
C2M0280120D
DISTI # 941-C2M0280120D		Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
RoHS: Compliant		4933
  • 1:$5.4300
  • 100:$5.2200
  • 500:$4.9700
C2M0280120D
DISTI # 9158820		Cree, Inc.N-CHAN SIC MOSFET 1200V 10A TO247, PK26
  • 120:£4.4700
  • 60:£4.5850
  • 30:£4.7700
  • 10:£4.8950
  • 2:£5.1050
C2M0280120D
DISTI # C2M0280120D		WolfspeedTransistor: N-MOSFET,SiC,unipolar,1.2kV,10A,62.5W,TO247-326
  • 30:$6.0100
  • 10:$6.4500
  • 3:$7.4300
  • 1:$8.4100
C2M0280120D
DISTI # C2M0280120D		WolfspeedSILICON CARBIDE MOSFETS
RoHS: Compliant		2649
  • 1:$5.3200
  • 11:$5.1600
  • 51:$4.9400
C2M0280120D
DISTI # 2630831		WolfspeedMOSFET, N-CH, 1.2KV, 10A, TO-247
RoHS: Compliant		634
  • 1:$9.0600
C2M0280120D
DISTI # 2630831		WolfspeedMOSFET, N-CH, 1.2KV, 10A, TO-247
RoHS: Compliant		726
  • 100:£4.2400
  • 50:£4.2800
  • 10:£4.3100
  • 5:£4.3500
  • 1:£4.8200
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OMO.#: OMO-AD5624RBRMZ-3

 Digital to Analog Converters - DAC IC 12-Bit w/ 5 ppm/oC On-Chip Ref
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
C3M0280090D

Mfr.#: C3M0280090D

OMO.#: OMO-C3M0280090D

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C2M1000170D

Mfr.#: C2M1000170D

OMO.#: OMO-C2M1000170D

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C2M0160120D

Mfr.#: C2M0160120D

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SCT2450KEC

Mfr.#: SCT2450KEC

OMO.#: OMO-SCT2450KEC

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C4D02120E

Mfr.#: C4D02120E

OMO.#: OMO-C4D02120E

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
C4D02120A

Mfr.#: C4D02120A

OMO.#: OMO-C4D02120A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
AD5624RBRMZ-3

Mfr.#: AD5624RBRMZ-3

OMO.#: OMO-AD5624RBRMZ-3-ANALOG-DEVICES-INC-ADI

 Digital to Analog Converters - DAC IC 12-Bit w/ 5 ppm/oC On-Chip Ref
MGJ2D051505SC

Mfr.#: MGJ2D051505SC

OMO.#: OMO-MGJ2D051505SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-5Vout 80/40mA SIP
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de C2M0280120D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,43 US$
5,43 US$
100
5,22 US$
522,00 US$
500
4,97 US$
2 485,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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