SCT2450KEC

SCT2450KEC
Mfr. #:
SCT2450KEC
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT2450KEC Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SCT2450KEC más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1200 V
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
450 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.6 V
Vgs - Voltaje puerta-fuente:
- 6 V, 22 V
Qg - Carga de puerta:
27 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
85 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
SCT2x
Tipo de transistor:
1 N-Channel Power MOSFET
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
1 S
Otoño:
34 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
360
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
38 ns
Tiempo típico de retardo de encendido:
19 ns
Parte # Alias:
SCT2450KE
Unidad de peso:
1.340411 oz
Tags
SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 85 W 1200 V 585 mOhm Flange Mount MosFet - TO-247-3
***ical
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 Tube
***roFlash
Power Field-Effect Transistor, 10A I(D), 1200V, 0.585ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
***ark
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.45Ohm; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET, 1200V,10A, SIC, T0-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 85W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Parte # Mfg. Descripción Valores Precio
SCT2450KEC
DISTI # 33590426
ROHM SemiconductorSCT2450KEC330
  • 30:$7.9062
SCT2450KEC
DISTI # SCT2450KEC-ND
ROHM SemiconductorMOSFET N-CH 1200V 10A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
1025In Stock
  • 510:$5.1615
  • 120:$5.9274
  • 30:$6.8267
  • 10:$7.1600
  • 1:$7.9300
SCT2450KEC
DISTI # SCT2450KEC
ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 10A 3-Pin TO-247 Tube (Alt: SCT2450KEC)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 540
  • 250:€5.0300
  • 100:€5.2500
  • 50:€5.6500
  • 10:€6.0600
  • 5:€6.6800
  • 1:€7.3200
SCT2450KEC
DISTI # SCT2450KEC
ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 10A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2450KEC)
RoHS: Compliant
Min Qty: 360
Container: Tube
Americas - 0
  • 3600:$4.2747
  • 2160:$4.3931
  • 1440:$4.6508
  • 720:$4.9406
  • 360:$5.2690
SCT2450KEC
DISTI # SCT2450KEC
ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 10A 3-Pin TO-247 Tube (Alt: SCT2450KEC)
RoHS: Compliant
Min Qty: 360
Container: Tube
Asia - 0
    SCT2450KEC
    DISTI # 06X0713
    ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 10A 3-Pin TO-247 Tube - Bulk (Alt: 06X0713)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 500:$5.6900
    • 250:$6.2400
    • 100:$6.5200
    • 50:$7.0200
    • 25:$7.5100
    • 10:$7.8800
    • 1:$8.7200
    SCT2450KEC
    DISTI # 06X0713
    ROHM SemiconductorMOSFET, N CHANNEL, 1.2KV, 10A, 0R45, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.45ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes55
    • 250:$5.7200
    • 100:$5.9800
    • 50:$6.4300
    • 25:$6.8900
    • 10:$7.2300
    • 1:$8.0000
    SCT2450KEC
    DISTI # 755-SCT2450KEC
    ROHM SemiconductorMOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
    RoHS: Compliant
    334
    • 1:$7.9200
    • 10:$7.1600
    • 25:$6.8200
    • 100:$5.9200
    • 250:$5.6600
    SCT2450KECROHM SemiconductorSingle N-Channel 85 W 1200 V 585 mOhm Flange Mount MosFet - TO-247-3
    RoHS: Compliant
    466Tube
    • 2:$7.5200
    • 10:$6.5100
    • 25:$6.1400
    • 50:$5.8800
    • 100:$5.6200
    SCT2450KEC
    DISTI # 1246855
    ROHM SemiconductorSIC MOSFET N-CHANNEL 1200V 10A TO247, EA59
    • 50:£4.8400
    • 25:£4.9400
    • 10:£5.1700
    • 5:£5.5200
    • 1:£6.1400
    SCT2450KECROHM Semiconductor 294
    • 133:$6.7485
    • 32:$7.5665
    • 1:$12.2700
    SCT2450KEC
    DISTI # TMOSP11348
    ROHM SemiconductorSiC-N 1200V 10A 585mOhm TO247-3
    RoHS: Compliant
    Stock DE - 1320Stock HK - 0Stock US - 0
    • 30:$7.6700
    • 60:$7.2400
    • 90:$6.8000
    • 120:$6.1400
    • 180:$5.9200
    SCT2450KEC
    DISTI # SCT2450KEC
    ROHM SemiconductorSiC-N-Ch 1200V 10A 85W 0,585R TO247
    RoHS: Compliant
    20
    • 1:€8.1000
    • 5:€7.1000
    • 10:€6.6000
    • 30:€6.3600
    SCT2450KEC
    DISTI # XSFP00000147523
    ROHM SEMICONDUCTORPower Field-Effect Transistor, 10A I(D),1200V,0.585ohm, 1-Element, N-Channel, SiliconCarbide,Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant
    252 in Stock0 on Order
    • 252:$10.0300
    • 14:$10.7400
    SCT2450KEC
    DISTI # XSKDRABS0028344
    ROHM SEMICONDUCTOR 
    RoHS: Compliant
    540 in Stock0 on Order
    • 540:$6.9000
    • 360:$7.3900
    SCT2450KECROHM SemiconductorRoHS(ship within 1day)8
    • 1:$5.8800
    • 10:$5.0000
    • 50:$4.4100
    • 100:$4.2400
    • 500:$4.1800
    • 1000:$4.0900
    SCT2450KEC
    DISTI # 2345469
    ROHM SemiconductorMOSFET, 1200V,10A, SIC, T0-247449
    • 100:£4.7500
    • 50:£5.1100
    • 10:£5.4700
    • 5:£6.3500
    • 1:£6.9200
    SCT2450KECUROHM Semiconductor 6840
    • 1:¥177.0409
    • 100:¥73.9677
    • 360:¥37.0800
    SCT2450KECROHM SemiconductorMOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
    RoHS: Compliant
    Americas - 60
      SCT2450KEC
      DISTI # 2345469
      ROHM SemiconductorMOSFET, 1200V,10A, SIC, T0-247
      RoHS: Compliant
      457
      • 100:$8.9200
      • 25:$10.2800
      • 10:$10.7900
      • 1:$11.9400
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      MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
      LSIC1MO120E0160

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      C2M1000170D

      Mfr.#: C2M1000170D

      OMO.#: OMO-C2M1000170D

      MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
      C2M0280120D

      Mfr.#: C2M0280120D

      OMO.#: OMO-C2M0280120D

      MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
      LT8610AXMSE#PBF

      Mfr.#: LT8610AXMSE#PBF

      OMO.#: OMO-LT8610AXMSE-PBF

      Switching Voltage Regulators 42V, 3.5A Synchronous Step-Down Regulator with 2.5uA Quiescent Current
      MCP6562-E/SN

      Mfr.#: MCP6562-E/SN

      OMO.#: OMO-MCP6562-E-SN-MICROCHIP-TECHNOLOGY

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      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de SCT2450KEC es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      7,92 US$
      7,92 US$
      10
      7,16 US$
      71,60 US$
      25
      6,82 US$
      170,50 US$
      100
      5,92 US$
      592,00 US$
      250
      5,66 US$
      1 415,00 US$
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