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STGE50NC60VD

STGE50NC60VD
Mfr. #:
STGE50NC60VD
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors N-chnl 50A-600V PowerMESH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGE50NC60VD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGE50NC60VD más información STGE50NC60VD Product Details
Atributo del producto
Valor de atributo
Fabricante
STMicroelectronics
categoria de producto
IGBT: módulos
Serie
PowerMESH
embalaje
Tubo
Unidad de peso
1 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
ISOTOP
Tipo de montaje
Montaje en chasis
Paquete de dispositivo de proveedor
ISOTOP
Aporte
Estándar
Configuración
Único
Potencia máxima
260W
Colector-corriente-Ic-Max
90A
Voltaje-Colector-Emisor-Ruptura-Máx.
600V
Recolector-actual-Corte-Máx.
150μA
Tipo IGBT
-
Vce-en-Max-Vge-Ic
2.5V @ 15V, 40A
Entrada-Capacitancia-Cies-Vce
4.55nF @ 25V
Termistor NTC
No
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
600 V
Voltaje máximo del emisor de puerta
+/- 20 V
Colector-continuo-Corriente-Ic-Max
80 A
Tags
STGE5, STGE, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 90 A, 2.5 V, 260 W, 600 V, Isotop, 4 Rohs Compliant: Yes
***et Europe
Trans IGBT Chip N-CH 600V 80A 4-Pin ISOTOP Tube
***ronik
IGBT 600V 90A 2.5V ISOTOP RoHSconf
***th Star Micro
IGBT 50A 600V ISOTOP
***ied Electronics & Automation
STMicroelectronics, STGE50NC60VD
***Components
STMicroelectronics STGE50NC60VD
***ment14 APAC
Prices include import duty and tax. IGBT, N 600V 50A ISOTOP; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Ic Continuous a Max:50A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:260W; Pulsed Current Icm:200A; Rise Time:17ns; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V
***nell
IGBT, N 600V 50A ISOTOP; Corrente di Collettore CC:90A; Tensione Saturaz Collettore-Emettitore Vce(on):2.5V; Dissipazione di Potenza Pd:260W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:ISOTOP; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015); Corrente Ic Continua a Max:50A; Corrente Pulsata Icm:200A; Dissipazione di Potenza Max:260W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Polarità Transistor:Canale N; Temperatura di Esercizio Min:-55°C; Tempo di Salita:17ns; Tensione Vces:600V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:IGBT
Parte # Mfg. Descripción Valores Precio
STGE50NC60VD
DISTI # 497-7011-5-ND		STMicroelectronicsIGBT 50A 600V ISOTOP
RoHS: Compliant
Min Qty: 100
Container: Tube		Limited Supply - Call
    STGE50NC60VD
    DISTI # 511-STGE50NC60VD    		STMicroelectronicsIGBT Transistors N-chnl 50A-600V PowerMESH
    RoHS: Compliant    		0
      STGE50NC60VDSTMicroelectronics 
      RoHS: Compliant      		Europe - 5
        Imagen Parte # Descripción
        STGE50NC60VD

        Mfr.#: STGE50NC60VD

        OMO.#: OMO-STGE50NC60VD

        		 IGBT Transistors N-chnl 50A-600V PowerMESH
        STGE50NC60WD

        Mfr.#: STGE50NC60WD

        OMO.#: OMO-STGE50NC60WD

        		 IGBT Transistors N-Ch 600volt 50 Amp
        STGE50NC60VD

        Mfr.#: STGE50NC60VD

        OMO.#: OMO-STGE50NC60VD-STMICROELECTRONICS

        		 IGBT Transistors N-chnl 50A-600V PowerMESH
        STGE50NC60WD

        Mfr.#: STGE50NC60WD

        OMO.#: OMO-STGE50NC60WD-STMICROELECTRONICS

        		 IGBT Transistors N-Ch 600volt 50 Amp
        STGE50N60D

        Mfr.#: STGE50N60D

        OMO.#: OMO-STGE50N60D-1190

        		 Nuevo y original
        STGE50NB60HD

        Mfr.#: STGE50NB60HD

        OMO.#: OMO-STGE50NB60HD-STMICROELECTRONICS

        		 IGBT N-CHAN 600V 50A ISOTOP
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de STGE50NC60VD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
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        100
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        500
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        1000
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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