STGE5

STGE50NC60VD vs STGE50NC60WD vs STGE50NB60HD

 
PartNumberSTGE50NC60VDSTGE50NC60WDSTGE50NB60HD
DescriptionIGBT Transistors N-chnl 50A-600V PowerMESHIGBT Transistors N-Ch 600volt 50 AmpIGBT N-CHAN 600V 50A ISOTOP
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsModule
RoHSYY-
TechnologySiSi-
Package / CaseISOTOP-4ISOTOP-4-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingle Dual EmitterSingle Dual EmitterSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGE50NC60VDSTGE50NC60WDPowerMESH
PackagingTubeTube-
Continuous Collector Current Ic Max80 A--
Height9.1 mm9.1 mm-
Length38.2 mm38.2 mm-
Width25.5 mm25.5 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Unit Weight1 oz1 oz-
Collector Emitter Saturation Voltage-2.5 V-
Continuous Collector Current at 25 C-50 A-
Pd Power Dissipation-260 W-
Gate Emitter Leakage Current-100 nA-
Package Case--ISOTOP
Mounting Type--Chassis Mount
Supplier Device Package--ISOTOP
Input--Standard
Power Max--300W
Current Collector Ic Max--100A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--250μA
IGBT Type---
Vce on Max Vge Ic--2.8V @ 15V, 50A
Input Capacitance Cies Vce--4.5nF @ 25V
NTC Thermistor--No
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGE50NC60VD IGBT Transistors N-chnl 50A-600V PowerMESH
STGE50NC60WD IGBT Transistors N-Ch 600volt 50 Amp
STGE50NC60VD IGBT Transistors N-chnl 50A-600V PowerMESH
STGE50NC60WD IGBT Transistors N-Ch 600volt 50 Amp
STGE50NB60HD IGBT N-CHAN 600V 50A ISOTOP
STGE50N60D Nuevo y original
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