STGE50NC60VD vs STGE50N60D vs STGE50NB60HD

 
PartNumberSTGE50NC60VDSTGE50N60DSTGE50NB60HD
DescriptionIGBT Transistors N-chnl 50A-600V PowerMESHIGBT N-CHAN 600V 50A ISOTOP
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-Module
RoHSY--
TechnologySi--
Package / CaseISOTOP-4--
Mounting StyleThrough Hole--
ConfigurationSingle Dual Emitter-Single
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGE50NC60VD-PowerMESH
PackagingTube--
Continuous Collector Current Ic Max80 A--
Height9.1 mm--
Length38.2 mm--
Width25.5 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity10--
SubcategoryIGBTs--
Unit Weight1 oz--
Package Case--ISOTOP
Mounting Type--Chassis Mount
Supplier Device Package--ISOTOP
Input--Standard
Power Max--300W
Current Collector Ic Max--100A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--250μA
IGBT Type---
Vce on Max Vge Ic--2.8V @ 15V, 50A
Input Capacitance Cies Vce--4.5nF @ 25V
NTC Thermistor--No
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