ZXTN25100DG stock, ZXTN25100DG, ZXTN25100DGQTA


PartNumber	ZXTN25100DGQTA	ZXTN25100DGTA	ZXTN25100DG
Description	Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm	Bipolar Transistors - BJT NPN 100V HIGH GAIN
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-223-4	SOT-223-4	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	100 V	100 V	-
Collector Base Voltage VCBO	180 V	180 V	-
Emitter Base Voltage VEBO	7 V	7 V	-
Collector Emitter Saturation Voltage	120 mV	-	-
Maximum DC Collector Current	3 A	3 A	-
Gain Bandwidth Product fT	175 MHz	175 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZXTN25100	ZXTN25100	-
DC Current Gain hFE Max	900 at 10 mA, 2 V	300	-
Packaging	Reel	Reel	-
Brand	Diodes Incorporated	Diodes Incorporated	-
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V	120	-
Pd Power Dissipation	1.2 W	5300 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Qualification	AEC-Q101	-	-
Factory Pack Quantity	1000	1000	-
Subcategory	Transistors	Transistors	-
Height	-	1.65 mm	-
Length	-	6.7 mm	-
Width	-	3.7 mm	-
Unit Weight	-	0.003951 oz	-

Search Part Number : "ZXTN25100DG", Match & Start with "ZXTN25100DG" - Total : 6

Fabricante	Parte #	Descripción
Diodes Incorporated	ZXTN25100DGQTA	Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm
Diodes Incorporated	ZXTN25100DGTA	Bipolar Transistors - BJT NPN 100V HIGH GAIN
	ZXTN25100DG	Nuevo y original
	ZXTN25100DGTA-CUT TAPE	Nuevo y original
	ZXTN25100DGTA	Bipolar Transistors - BJT NPN 100V HIGH GAIN
	ZXTN25100DGQTA	Trans GP BJT NPN 100V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R

ZXTN25100DG