PartNumber | ZXTN25100DGQTA | ZXTN25100DFHTA | ZXTN25100DGTA |
Description | Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm | Bipolar Transistors - BJT NPN 100V HIGH GAIN | Bipolar Transistors - BJT NPN 100V HIGH GAIN |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-4 | SOT-23-3 | SOT-223-4 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 100 V | 100 V | 100 V |
Collector Base Voltage VCBO | 180 V | 180 V | 180 V |
Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
Collector Emitter Saturation Voltage | 120 mV | - | - |
Maximum DC Collector Current | 3 A | 2.5 A | 3 A |
Gain Bandwidth Product fT | 175 MHz | 175 MHz | 175 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | ZXTN25100 | ZXTN25100 | ZXTN25100 |
DC Current Gain hFE Max | 900 at 10 mA, 2 V | 300 at 10 mA, 2 V | 300 |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
DC Collector/Base Gain hfe Min | 300 at 10 mA, 2 V | 120 | 120 |
Pd Power Dissipation | 1.2 W | 1810 mW | 5300 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 1000 | 3000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Height | - | 1 mm | 1.65 mm |
Length | - | 3.05 mm | 6.7 mm |
Width | - | 1.4 mm | 3.7 mm |
Unit Weight | - | 0.000282 oz | 0.003951 oz |