VEC2616-T

VEC2616-TL-H-Z-W vs VEC2616-TL vs VEC2616-TL-HX

 
PartNumberVEC2616-TL-H-Z-WVEC2616-TLVEC2616-TL-HX
DescriptionMOSFET PCH+NCH 4V DRIVE SERIES
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
PackagingReelDigi-ReelR Alternate Packaging-
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Series-VEC2616-
Mounting Style-SMD/SMT-
Package Case-8-SMD, Flat Lead-
Technology-Si-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-8-VEC-
Configuration-1 N-Channel 1 P-Channel-
FET Type-N and P-Channel-
Power Max-1W-
Transistor Type-1 N-Channel 1 P-Channel-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-505pF @ 20V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3A, 2.5A-
Rds On Max Id Vgs-80 mOhm @ 1.5A, 10V-
Vgs th Max Id-2.6V @ 1mA-
Gate Charge Qg Vgs-10nC @ 10V-
Pd Power Dissipation-900 mW-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-22 ns-
Rise Time-7.5 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-3 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-137 mOhms-
Transistor Polarity-N-Channel P-Channel-
Typical Turn Off Delay Time-41 ns-
Typical Turn On Delay Time-7.3 ns-
Qg Gate Charge-10 nC-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
VEC2616-TL-W MOSFET PCH+NCH 4V DRIVE SERIES
VEC2616-TL-H-Z-W MOSFET PCH+NCH 4V DRIVE SERIES
VEC2616-TL-W-CUT TAPE Nuevo y original
VEC2616-TL Nuevo y original
VEC2616-TL-HX Nuevo y original
ON Semiconductor
ON Semiconductor
VEC2616-TL-H MOSFET PCH+NCH 4V DRIVE SERIES
VEC2616-TL-H MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-H-Z MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-H-Z-W PCH+NCH 4V DRIVE SERIES
VEC2616-TL-W MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-W-Z MOSFET N/P-CH 60V 3A/2.5A VEC8
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