PartNumber | VEC2616-TL-H-Z-W | VEC2616-TL | VEC2616-TL-HX |
Description | MOSFET PCH+NCH 4V DRIVE SERIES | ||
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Brand | ON Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Series | - | VEC2616 | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | 8-SMD, Flat Lead | - |
Technology | - | Si | - |
Operating Temperature | - | 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | 8-VEC | - |
Configuration | - | 1 N-Channel 1 P-Channel | - |
FET Type | - | N and P-Channel | - |
Power Max | - | 1W | - |
Transistor Type | - | 1 N-Channel 1 P-Channel | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 505pF @ 20V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 3A, 2.5A | - |
Rds On Max Id Vgs | - | 80 mOhm @ 1.5A, 10V | - |
Vgs th Max Id | - | 2.6V @ 1mA | - |
Gate Charge Qg Vgs | - | 10nC @ 10V | - |
Pd Power Dissipation | - | 900 mW | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 22 ns | - |
Rise Time | - | 7.5 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 3 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 137 mOhms | - |
Transistor Polarity | - | N-Channel P-Channel | - |
Typical Turn Off Delay Time | - | 41 ns | - |
Typical Turn On Delay Time | - | 7.3 ns | - |
Qg Gate Charge | - | 10 nC | - |
Channel Mode | - | Enhancement | - |