PartNumber | VEC2616-TL-H-Z-W | VEC2616 | VEC2616-TL |
Description | MOSFET PCH+NCH 4V DRIVE SERIES | ||
Manufacturer | ON Semiconductor | - | ON Semiconductor |
Product Category | MOSFET | - | FETs - Arrays |
RoHS | Y | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Brand | ON Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Series | - | - | VEC2616 |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | 8-SMD, Flat Lead |
Technology | - | - | Si |
Operating Temperature | - | - | 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 8-VEC |
Configuration | - | - | 1 N-Channel 1 P-Channel |
FET Type | - | - | N and P-Channel |
Power Max | - | - | 1W |
Transistor Type | - | - | 1 N-Channel 1 P-Channel |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 505pF @ 20V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 3A, 2.5A |
Rds On Max Id Vgs | - | - | 80 mOhm @ 1.5A, 10V |
Vgs th Max Id | - | - | 2.6V @ 1mA |
Gate Charge Qg Vgs | - | - | 10nC @ 10V |
Pd Power Dissipation | - | - | 900 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 22 ns |
Rise Time | - | - | 7.5 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 3 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 137 mOhms |
Transistor Polarity | - | - | N-Channel P-Channel |
Typical Turn Off Delay Time | - | - | 41 ns |
Typical Turn On Delay Time | - | - | 7.3 ns |
Qg Gate Charge | - | - | 10 nC |
Channel Mode | - | - | Enhancement |