VEC2616

VEC2616-TL-H-Z-W vs VEC2616 vs VEC2616-TL

 
PartNumberVEC2616-TL-H-Z-WVEC2616VEC2616-TL
DescriptionMOSFET PCH+NCH 4V DRIVE SERIES
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
PackagingReel-Digi-ReelR Alternate Packaging
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Series--VEC2616
Mounting Style--SMD/SMT
Package Case--8-SMD, Flat Lead
Technology--Si
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--8-VEC
Configuration--1 N-Channel 1 P-Channel
FET Type--N and P-Channel
Power Max--1W
Transistor Type--1 N-Channel 1 P-Channel
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--505pF @ 20V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--3A, 2.5A
Rds On Max Id Vgs--80 mOhm @ 1.5A, 10V
Vgs th Max Id--2.6V @ 1mA
Gate Charge Qg Vgs--10nC @ 10V
Pd Power Dissipation--900 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--22 ns
Rise Time--7.5 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--3 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--137 mOhms
Transistor Polarity--N-Channel P-Channel
Typical Turn Off Delay Time--41 ns
Typical Turn On Delay Time--7.3 ns
Qg Gate Charge--10 nC
Channel Mode--Enhancement
Fabricante Parte # Descripción RFQ
VEC2616-TL-W MOSFET PCH+NCH 4V DRIVE SERIES
VEC2616-TL-H-Z-W MOSFET PCH+NCH 4V DRIVE SERIES
VEC2616-TL-W-CUT TAPE Nuevo y original
VEC2616 Nuevo y original
VEC2616-TL Nuevo y original
VEC2616-TL-HX Nuevo y original
ON Semiconductor
ON Semiconductor
VEC2616-TL-H MOSFET PCH+NCH 4V DRIVE SERIES
VEC2616-TL-H MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-H-Z MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-H-Z-W PCH+NCH 4V DRIVE SERIES
VEC2616-TL-W MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-W-Z MOSFET N/P-CH 60V 3A/2.5A VEC8
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