 |  | | |
| PartNumber | TK62N60X,S1F | TK62N60X | TK62N60X K62N60X |
| Description | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 61.8 A | - | - |
| Rds On Drain Source Resistance | 33 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 135 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 400 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 20.95 mm | - | - |
| Length | 15.94 mm | - | - |
| Series | TK62N60X | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.02 mm | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 240 ns | - | - |
| Typical Turn On Delay Time | 90 ns | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TK62N60X,S1F | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | |
| TK62N60X,S1F | IGBT Transistors MOSFET DTMOSIV-High Speed 600V 40mOhmmax | ||
| TK62N60X | Nuevo y original | ||
| TK62N60X,S1F(S | Nuevo y original | ||
| TK62N60XS1F | MOSFET 600V HIGH SPEED 40MOHM DTMOS | ||
| TK62N60XS1F(S | Nuevo y original | ||
| TK62N60X K62N60X | Nuevo y original | ||
| TK62N60XS1F-ND | Nuevo y original |