TK62N60X,S1F

TK62N60X,S1F
Mfr. #:
TK62N60X,S1F
Fabricante:
Toshiba
Descripción:
IGBT Transistors MOSFET DTMOSIV-High Speed 600V 40mOhmmax
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TK62N60X,S1F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TK62N60X,S1F más información
Atributo del producto
Valor de atributo
Fabricante
Toshiba Semiconductor y almacenamiento
categoria de producto
FET - Single
Serie
-
embalaje
Tubo
Paquete-Estuche
TO-247-3
Temperatura de funcionamiento
150°C (TJ)
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
400W
Drenaje-a-fuente-voltaje-Vdss
600V
Entrada-Capacitancia-Ciss-Vds
6500pF @ 300V
Función FET
Super Junction
Corriente-Continuo-Drenaje-Id-25 ° C
61.8A (Ta)
Rds-On-Max-Id-Vgs
40 mOhm @ 21A, 10V
Vgs-th-Max-Id
3.5V @ 3.1mA
Puerta-Carga-Qg-Vgs
135nC @ 10V
Tags
TK62N60X, TK62N, TK62, TK6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-247(Os) Moq=2000 Pd=400W F=1Mhz Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 600V 61.8A 3-Pin TO-247
***i-Key
MOSFET N-CH 600V 61.8A TO-247
***
600V HIGH SPEED 40MOHM DTMOS
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Parte # Mfg. Descripción Valores Precio
TK62N60X,S1F
DISTI # V99:2348_13896163
Toshiba America Electronic ComponentsMOSFET N-CH 600V 61.8A TO-24744
  • 1000:$5.1050
  • 500:$5.7970
  • 250:$6.3310
  • 100:$6.8560
  • 25:$7.5370
  • 10:$8.2140
  • 1:$9.0310
TK62N60X,S1F
DISTI # TK62N60XS1F-ND
Toshiba America Electronic ComponentsMOSFET N-CH 600V 61.8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
667In Stock
  • 510:$6.9820
  • 120:$8.3333
  • 30:$9.2343
  • 1:$11.2600
TK62N60X,S1F
DISTI # 25885819
Toshiba America Electronic ComponentsMOSFET N-CH 600V 61.8A TO-24744
  • 25:$7.5120
  • 10:$8.1850
  • 2:$8.9970
TK62N60X,S1F
DISTI # TK62N60X,S1F
Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 61.8A 3-Pin TO-247 - Rail/Tube (Alt: TK62N60X,S1F)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 0
  • 30:$6.3900
  • 60:$5.9900
  • 120:$5.5900
  • 180:$5.2900
  • 300:$5.1900
TK62N60X,S1F
DISTI # 757-TK62N60XS1F
Toshiba America Electronic ComponentsMOSFET DTMOSIV-High Speed 600V 40mOhmmax
RoHS: Compliant
183
  • 1:$10.2400
  • 10:$9.2200
  • 25:$8.4000
  • 100:$7.5800
  • 250:$6.9700
  • 500:$6.3500
  • 1000:$5.5300
TK62N60X,S1F(S
DISTI # 1250586
Toshiba America Electronic ComponentsMOSFET N-CHANNEL 600V 61.8A TO247, EA7
  • 1:£6.1000
  • 5:£5.4800
  • 10:£5.0100
  • 25:£4.9400
  • 50:£4.8800
TK62N60X,S1F
DISTI # C1S751200963010
Toshiba America Electronic ComponentsMOSFETs
RoHS: Compliant
44
  • 25:$7.5120
  • 10:$8.1850
  • 1:$8.9970
TK62N60XS1FToshiba America Electronic ComponentsMOSFET 600V HIGH SPEED 40MOHM DTMOS
RoHS: Compliant
Americas - 60
  • 30:$6.8710
  • 60:$6.5000
  • 120:$6.1560
  • 270:$5.7580
TK62N60X,S1FToshiba America Electronic ComponentsMOSFET DTMOSIV-High Speed 600V 40mOhmmax
RoHS: Compliant
Americas - 60
  • 30:$6.8710
  • 60:$6.5000
  • 120:$6.1560
  • 270:$5.7580
Imagen Parte # Descripción
TK62N60W S1VF(S

Mfr.#: TK62N60W S1VF(S

OMO.#: OMO-TK62N60W-S1VF-S-1190

Nuevo y original
TK62N60W,S1VF

Mfr.#: TK62N60W,S1VF

OMO.#: OMO-TK62N60W-S1VF-TOSHIBA-SEMICONDUCTOR-AND-STOR

X35 PB-F POWER MOSFET TRANSIST
TK62N60W5.S1VF(S

Mfr.#: TK62N60W5.S1VF(S

OMO.#: OMO-TK62N60W5-S1VF-S-1190

Nuevo y original
TK62N60W5S1VF

Mfr.#: TK62N60W5S1VF

OMO.#: OMO-TK62N60W5S1VF-1190

Nuevo y original
TK62N60WS1VF

Mfr.#: TK62N60WS1VF

OMO.#: OMO-TK62N60WS1VF-1190

Trans MOSFET N 600V 61.8A 3-Pin TO-247 Tube - Rail/Tube (Alt: TK62N60W,S1VF)
TK62N60WS1VF(S

Mfr.#: TK62N60WS1VF(S

OMO.#: OMO-TK62N60WS1VF-S-1190

Nuevo y original
TK62N60X

Mfr.#: TK62N60X

OMO.#: OMO-TK62N60X-1190

Nuevo y original
TK62N60X,S1F(S

Mfr.#: TK62N60X,S1F(S

OMO.#: OMO-TK62N60X-S1F-S-1190

Nuevo y original
TK62N60XS1F

Mfr.#: TK62N60XS1F

OMO.#: OMO-TK62N60XS1F-1190

MOSFET 600V HIGH SPEED 40MOHM DTMOS
TK62N60X K62N60X

Mfr.#: TK62N60X K62N60X

OMO.#: OMO-TK62N60X-K62N60X-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de TK62N60X,S1F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,66 US$
7,66 US$
10
7,27 US$
72,75 US$
100
6,89 US$
689,18 US$
500
6,51 US$
3 254,45 US$
1000
6,13 US$
6 126,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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