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| PartNumber | TK12E80W,S1X | TK12E80W | TK12E80WS1X-ND |
| Description | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 11.5 A | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 165 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Series | TK12E80W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 130 ns | - | - |
| Typical Turn On Delay Time | 70 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TK12E80W,S1X | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | |
| TK12E80W | Nuevo y original | ||
| TK12E80WS1X-ND | Nuevo y original |