PartNumber | TK12E60W,S1VX | TK12E60U,S1X(S | TK12E60W |
Description | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | MOSFET N-Ch MOS 12A 600V 144W 720pF 0.4 | |
Manufacturer | Toshiba | Toshiba | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 11.5 A | 12 A | - |
Rds On Drain Source Resistance | 300 mOhms | 400 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 25 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 110 W | 144 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | DTMOSIV | DTMOSIV | - |
Height | 15.1 mm | 15.1 mm | - |
Length | 10.16 mm | 10.16 mm | - |
Series | TK12E60W | TK12E60U | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.45 mm | 4.45 mm | - |
Brand | Toshiba | Toshiba | - |
Fall Time | 5.5 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 23 ns | - | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 85 ns | - | - |
Typical Turn On Delay Time | 23 ns | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Packaging | - | Tube | - |