TK12E

TK12E60W,S1VX vs TK12E60U,S1X(S vs TK12E60W

 
PartNumberTK12E60W,S1VXTK12E60U,S1X(STK12E60W
DescriptionMOSFET N-Ch 11.5A 110W FET 600V 890pF 25nCMOSFET N-Ch MOS 12A 600V 144W 720pF 0.4
ManufacturerToshibaToshiba-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current11.5 A12 A-
Rds On Drain Source Resistance300 mOhms400 mOhms-
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation110 W144 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameDTMOSIVDTMOSIV-
Height15.1 mm15.1 mm-
Length10.16 mm10.16 mm-
SeriesTK12E60WTK12E60U-
Transistor Type1 N-Channel1 N-Channel-
Width4.45 mm4.45 mm-
BrandToshibaToshiba-
Fall Time5.5 ns--
Product TypeMOSFETMOSFET-
Rise Time23 ns--
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time23 ns--
Unit Weight0.211644 oz0.211644 oz-
Packaging-Tube-
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK12E80W,S1X MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W
TK12E60W,S1VX MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
TK12E60U,S1X(S MOSFET N-Ch MOS 12A 600V 144W 720pF 0.4
TK12E60W,S1VX Darlington Transistors MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
TK12E60U,S1X(S MOSFET N-Ch MOS 12A 600V 144W 720pF 0.4
TK12E60W Nuevo y original
TK12E80W Nuevo y original
TK12E60W,S1VX(S Power MOSFET Drivers
TK12E60WS1VX MOSFET POWER MOSFET TRANSISTOR
TK12E60WS1VXS Nuevo y original
TK12E60WS1VX-ND Nuevo y original
TK12E80WS1X-ND Nuevo y original
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