PartNumber | STGWT40H65DFB | STGWT40H60DLFB | STGWT40H65FB |
Description | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-3P | TO-3P | TO-3P |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | 650 V |
Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | 1.6 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
Pd Power Dissipation | 283 W | 283 W | 283 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | STGWT40H65DFB | STGWT40H60DLFB | STGWT40H65FB |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 40 A | 40 A | 40 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | 250 nA | 250 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 300 | 300 | 300 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.238311 oz | 0.238311 oz | 0.238311 oz |