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STGWT40H65DFB

STGWT40H65DFB
Mfr. #:
STGWT40H65DFB
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGWT40H65DFB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGWT40H65DFB más información STGWT40H65DFB Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3P
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
283 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGWT40H65DFB
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
300
Subcategoría:
IGBT
Unidad de peso:
0.238311 oz
Tags
STGWT40H65, STGWT40H6, STGWT40H, STGWT4, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
STMicroelectronics STGWT40H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***ure Electronics
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
***p One Stop Japan
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 40A TO-3P
***i-Key
IGBT 650V 80A 283W TO3P-3L
***ark
Ptd High Voltage
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Parte # Mfg. Descripción Valores Precio
STGWT40H65DFB
DISTI # V36:1790_06560827		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant		0
    STGWT40H65DFB
    DISTI # 497-14229-5-ND    		STMicroelectronicsIGBT 650V 80A 283W TO3P-3L
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		396In Stock
    • 2520:$2.1420
    • 510:$2.6668
    • 120:$3.1327
    • 30:$3.6147
    • 10:$3.8230
    • 1:$4.2600
    STGWT40H65DFB
    DISTI # STGWT40H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 0
    • 300:€1.7900
    • 180:€1.8900
    • 120:€1.9900
    • 60:€2.0900
    • 30:€2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 3000:$1.8900
    • 6000:$1.8900
    • 1800:$1.9900
    • 1200:$2.0900
    • 600:$2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Asia - 0
    • 30000:$1.4868
    • 15000:$1.5270
    • 6000:$1.5694
    • 3000:$1.6377
    • 1800:$1.7121
    • 1200:$1.7937
    • 600:$1.8833
    STGWT40H65DFB
    DISTI # 40X8766    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$1.9900
    • 250:$2.0500
    • 100:$2.4500
    • 50:$2.8300
    • 25:$3.0200
    • 10:$3.4500
    • 1:$3.9800
    STGWT40H65DFB
    DISTI # 511-STGWT40H65DFB    		STMicroelectronicsIGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
    RoHS: Compliant    		311
    • 1:$4.0500
    • 10:$3.4400
    • 100:$2.9800
    • 250:$2.8300
    • 500:$2.5400
    • 1000:$2.1400
    • 2500:$2.0300
    STGWT40H65DFB
    DISTI # 8294506P    		STMicroelectronicsIGBT TRENCH HB SERIES 650V 40A TO-3P, TU74
    • 10:£2.5000
    • 5:£2.7100
    STGWT40H65DFBSTMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant    		Europe - 720
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      Disponibilidad
      Valores:
      309
      En orden:
      2292
      Ingrese la cantidad:
      El precio actual de STGWT40H65DFB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      4,05 US$
      4,05 US$
      10
      3,44 US$
      34,40 US$
      100
      2,98 US$
      298,00 US$
      250
      2,83 US$
      707,50 US$
      500
      2,54 US$
      1 270,00 US$
      1000
      2,14 US$
      2 140,00 US$
      2500
      2,03 US$
      5 075,00 US$
      5000
      1,95 US$
      9 750,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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