STGWA8 stock, STGWA8, STGWA80H65FB


PartNumber	STGWA80H65FB	STGWA8M120DF3	STGWA80H65DFB
Description	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed	IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss	IGBT Transistors IGBT & Power Bipolar
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	-	Y
Technology	Si	Si	Si
Package / Case	TO-247-3	TO-247-3	TO-247-3
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	650 V	1200 V	650 V
Collector Emitter Saturation Voltage	1.6 V	1.85 V	2 V
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Continuous Collector Current at 25 C	120 A	16 A	120 A
Pd Power Dissipation	469 W	167 W	469 W
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Series	STGWA80H65FB	STGWA8M120DF3	STGWA80H65DFB
Packaging	Tube	-	-
Continuous Collector Current Ic Max	80 A	-	80 A
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Gate Emitter Leakage Current	250 nA	250 nA	250 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	600	600	600
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	1.340411 oz	-	1.340411 oz
Height	-	-	5.3 mm
Length	-	-	20.3 mm
Operating Temperature Range	-	-	- 55 C to + 175 C
Width	-	-	15.9 mm
Continuous Collector Current	-	-	120 A

Search Part Number : "STGWA8", Match & Start with "STGWA8" - Total : 6

Fabricante	Parte #	Descripción
STMicroelectronics	STGWA80H65FB	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
	STGWA8M120DF3	IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
	STGWA80H65DFB	IGBT Transistors IGBT & Power Bipolar
	STGWA80H65FB	IGBT 650V 120A 469W TO247
	STGWA8M120DF3	STMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
	STGWA80H65DFB	IGBT BIPO 650V 80A TO247-3

STGWA8