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STGWA8M120DF3

STGWA8M120DF3
Mfr. #:
STGWA8M120DF3
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGWA8M120DF3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGWA8M120DF3 más información STGWA8M120DF3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.85 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
16 A
Pd - Disipación de energía:
167 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGWA8M120DF3
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Tags
STGWA8, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current:16A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
STGWA8M120DF3
DISTI # STGWA8M120DF3-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$2.3531
STGWA8M120DF3
DISTI # STGWA8M120DF3		STMicroelectronicsSTMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
Min Qty: 600
Container: Tray		Americas - 0
  • 3000:$1.5900
  • 6000:$1.5900
  • 600:$1.6900
  • 1200:$1.6900
  • 1800:$1.6900
STGWA8M120DF3
DISTI # 14AC7542		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes70
  • 500:$2.2700
  • 250:$2.5300
  • 100:$2.6700
  • 50:$2.8000
  • 25:$2.9400
  • 10:$3.0700
  • 1:$3.6200
STGWA8M120DF3
DISTI # 511-STGWA8M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss0
  • 1:$3.5800
  • 10:$3.0400
  • 100:$2.6400
  • 250:$2.5000
  • 500:$2.2500
  • 1000:$1.8900
  • 2500:$1.8000
STGWA8M120DF3
DISTI # IGBT2612		STMicroelectronicsIGBT 1200V8A 1,85VTO-247 LLStock DE - 0Stock HK - 0Stock US - 0
  • 600:$2.0100
STGWA8M120DF3
DISTI # 2729672		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3
RoHS: Compliant		70
  • 1000:$2.8400
  • 500:$3.0500
  • 250:$3.4300
  • 100:$3.8100
  • 10:$4.3000
  • 1:$4.9300
STGWA8M120DF3
DISTI # 2729672		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-370
  • 500:£1.7400
  • 250:£1.9400
  • 100:£2.0600
  • 10:£2.3700
  • 1:£3.1300
Imagen Parte # Descripción
STGWA80H65FB

Mfr.#: STGWA80H65FB

OMO.#: OMO-STGWA80H65FB

 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWA8M120DF3

Mfr.#: STGWA8M120DF3

OMO.#: OMO-STGWA8M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGWA80H65DFB

Mfr.#: STGWA80H65DFB

OMO.#: OMO-STGWA80H65DFB

 IGBT Transistors IGBT & Power Bipolar
STGWA80H65FB

Mfr.#: STGWA80H65FB

OMO.#: OMO-STGWA80H65FB-STMICROELECTRONICS

 IGBT 650V 120A 469W TO247
STGWA8M120DF3

Mfr.#: STGWA8M120DF3

OMO.#: OMO-STGWA8M120DF3-STMICROELECTRONICS

 STMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
STGWA80H65DFB

Mfr.#: STGWA80H65DFB

OMO.#: OMO-STGWA80H65DFB-STMICROELECTRONICS

 IGBT BIPO 650V 80A TO247-3
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de STGWA8M120DF3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,58 US$
3,58 US$
10
3,04 US$
30,40 US$
100
2,64 US$
264,00 US$
250
2,50 US$
625,00 US$
500
2,25 US$
1 125,00 US$
1000
1,89 US$
1 890,00 US$
2500
1,80 US$
4 500,00 US$
5000
1,73 US$
8 650,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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