![]() | |||
| PartNumber | STGWA50IH65DF | STGWA50M65DF2 | STGWA60H65DFB |
| Description | IGBT Transistors | IGBT Transistors PTD HIGH VOLTAGE | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.65 V | 2 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 100 A | 80 A | 80 A |
| Pd Power Dissipation | 300 W | 375 W | 375 W |
| Series | STGWA50IH65DF | STGWA50M65DF2 | STGWA60H65DFB |
| Continuous Collector Current Ic Max | 100 A | 80 A | 80 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | +/- 250 uA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| RoHS | - | Y | Y |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Unit Weight | - | 0.211644 oz | 1.340411 oz |
| Height | - | - | 5.15 mm |
| Length | - | - | 20.15 mm |
| Operating Temperature Range | - | - | - 55 C to + 175 C |
| Width | - | - | 15.75 mm |
| Continuous Collector Current | - | - | 80 A |