 | |  | |
| PartNumber | STD12N50DM2 | STD12N50M2 | STD127DT4 |
| Description | MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package | Bipolar Transistors - BJT High VTG fast switch NPN pwr transistor |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | DPAK-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | NPN |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 11 A | 10 A | - |
| Rds On Drain Source Resistance | 350 mOhms | 325 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | - |
| Vgs Gate Source Voltage | 25 V | 30 V | - |
| Qg Gate Charge | 120 nC | 15 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 85 W | 35 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Reel | Reel | Reel |
| Series | STD12N50DM2 | STD12N50M2 | STD127DT4 |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | - |
| Fall Time | 9.8 ns | 34.5 ns | - |
| Product Type | MOSFET | MOSFET | BJTs - Bipolar Transistors |
| Rise Time | 9 ns | 10.5 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | Transistors |
| Typical Turn Off Delay Time | 28 ns | 8 ns | - |
| Typical Turn On Delay Time | 12.5 ns | 13.5 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.012346 oz |
| Collector Emitter Voltage VCEO Max | - | - | 400 V |
| Emitter Base Voltage VEBO | - | - | 18 V |
| Collector Emitter Saturation Voltage | - | - | 1.3 V |
| Maximum DC Collector Current | - | - | 4 A |
| DC Current Gain hFE Max | - | - | 40 |
| Continuous Collector Current | - | - | 4 A |
| DC Collector/Base Gain hfe Min | - | - | 5 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STD12N50DM2 | MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | |
| STD12N60M2 | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package | ||
| STD12NF06L-1 | MOSFET N-Ch 60 Volt 12 Amp | ||
| STD12N65M2 | MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N60DM2AG | MOSFET | ||
| STD12N50M2 | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD127DT4 | Bipolar Transistors - BJT High VTG fast switch NPN pwr transistor | ||
| STD12NF06LT4 | MOSFET N-Ch 60 Volt 12 Amp | ||
| STD12N65M5 | MOSFET POWER MOSFET N-CH 650V | ||
| STD127DT4 | Bipolar Transistors - BJT High VTG fast switch NPN pwr transisto | ||
| STD12N65M2 | RF Bipolar Transistors MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N50DM2 | N-CHANNEL 500 V, 0.35 OHM TYP., | ||
| STD12N50M2 | MOSFET N-CH 500V 10A DPAK | ||
| STD12N60M2 | MOSFET N-CHANNEL 600V 9A DPAK | ||
| STD12N65M5 | MOSFET N-CH 650V 8.5A DPAK | ||
| STD12NF06-1 | MOSFET N-CH 60V 12A IPAK | ||
| STD12NF06L-1 | MOSFET N-CH 60V 12A IPAK | ||
| STD12NF06LT4 | MOSFET N-CH 60V 12A DPAK | ||
| STD12NF06T4 | MOSFET N-CH 60V 12A DPAK | ||
| STD12NM50N | MOSFET N-CH 500V 11A DPAK | ||
ON Semiconductor |
STD12N10T4G | Switching Controllers NFET DPAK SPCL 100V | |
| STD12N10T4G | MOSFET N-CH SPCL 100V DPAK | ||
| STD12N60M2-CUT TAPE | Nuevo y original | ||
| STD12NF06LT4-CUT TAPE | Nuevo y original | ||
| STD12N65M5 12N65M5 | Nuevo y original | ||
| STD12N50M2 12N50M2 | Nuevo y original | ||
| STD123UF SOT323-123 | Nuevo y original | ||
| STD12C7H | Nuevo y original | ||
| STD12FN06L | Nuevo y original | ||
| STD12L01 | Nuevo y original | ||
| STD12N05 | 12 A, 50 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | ||
| STD12N05T4 | MOSFET N-Ch 50 Volt 12 Amp | ||
| STD12N06L | MOSFET TO-251 N-CH 60V 12A | ||
| STD12N06LT4 | Nuevo y original | ||
| STD12N06T4 | Nuevo y original | ||
| STD12N10L | Nuevo y original | ||
| STD12NE06 | MOSFET Transistor, N-Channel, TO-252AA | ||
| STD12NE06-TR | Nuevo y original | ||
| STD12NE06L | MOSFET Transistor, N-Channel, TO-252AA | ||
| STD12NE06L-TR | Nuevo y original | ||
| STD12NE06T4 | Nuevo y original | ||
| STD12NF06L | MOSFET, N, LOGIC, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.08ohm, Rds(on) Test Voltage Vgs:10V, Threshold Volt | ||
| STD12NF06L1 | Nuevo y original | ||
| STD12NF06LT4,D12NF06L,ST | Nuevo y original | ||
| STD12NF06LT4G | Nuevo y original | ||
| STD12NF06T4T4 | Nuevo y original | ||
| STD12N05L | Nuevo y original | ||
| STD12N06 | MOSFET TO-251 N-CH 60V 12A | ||
| STD12NE06LT4 | *** FREE SHIPPING ORDERS OVER $100 *** POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | ||
| STD12NF06 | Nuevo y original |