| PartNumber | SIS890DN-T1-GE3 | SIS892ADN-T1-GE3 | SIS888DN-T1-GE3 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 30 A | 28 A | - |
| Rds On Drain Source Resistance | 19.5 mOhms | 27 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 29 nC | 19.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 52 W | 52 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET, PowerPAK | ThunderFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | 1.04 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | SIS | SIS | SIS |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 25 S | 19 S | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 13 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Part # Aliases | SIS890DN-GE3 | SIS892ADN-GE3 | - |