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SIS892ADN-T1-GE3

SIS892ADN-T1-GE3
Mfr. #:
SIS892ADN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS892ADN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIS892ADN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
28 A
Rds On - Resistencia de la fuente de drenaje:
27 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
19.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
52 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
3.3 mm
Serie:
SIS
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
19 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
16 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
SIS892ADN-GE3
Tags
SIS892, SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 100V, 28A, POWERPAK 1212-8; Transistor Polarity:N Channel; Continu
***ure Electronics
MOSFET 100V 33MOHM@10V 28A N-CH MV T-FET
***ronik
N-CH 100V 28A 33mOhm PPAK1212-8
***nell
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIS892ADN-T1-GE3
DISTI # V36:1790_07435337		Vishay IntertechnologiesTrans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000:$0.4227
SIS892ADN-T1-GE3
DISTI # V72:2272_07435337		Vishay IntertechnologiesTrans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 100V 28A PPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		9779In Stock
    • 1000:$0.5029
    • 500:$0.6370
    • 100:$0.7711
    • 10:$0.9890
    • 1:$1.1100
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 100V 28A PPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		9779In Stock
    • 1000:$0.5029
    • 500:$0.6370
    • 100:$0.7711
    • 10:$0.9890
    • 1:$1.1100
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 100V 28A PPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		9000In Stock
    • 15000:$0.4166
    • 6000:$0.4329
    • 3000:$0.4557
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3    		Vishay IntertechnologiesTransistor MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 (Alt: SIS892ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000    		Europe - 0
    • 30000:€0.3759
    • 18000:€0.4039
    • 12000:€0.4369
    • 6000:€0.5079
    • 3000:€0.7449
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.3969
    • 18000:$0.4079
    • 12000:$0.4199
    • 6000:$0.4369
    • 3000:$0.4509
    SIS892ADN-T1-GE3
    DISTI # 63W4139    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V RoHS Compliant: Yes13714
    • 500:$0.5960
    • 250:$0.6440
    • 100:$0.6930
    • 50:$0.7630
    • 25:$0.8320
    • 10:$0.9020
    • 1:$1.0900
    SIS892ADN-T1-GE3
    DISTI # 99W9583    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 28A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 10000:$0.3940
    • 6000:$0.4030
    • 4000:$0.4190
    • 2000:$0.4650
    • 1000:$0.5120
    • 1:$0.5340
    SIS892ADN-T1-GE3
    DISTI # 78-SIS892ADN-T1-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		4502
    • 1:$1.0800
    • 10:$0.8920
    • 100:$0.6850
    • 500:$0.5890
    • 1000:$0.4640
    • 3000:$0.4330
    • 6000:$0.4120
    • 9000:$0.3960
    SIS892ADN-T1-GE3
    DISTI # TMOSP10986    		Vishay IntertechnologiesN-CH 100V 28A 33mOhm PPAK1212-8
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.4025
    SIS892ADN-T1-GE3
    DISTI # 2283695    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-121213644
    • 500:£0.4050
    • 250:£0.4380
    • 100:£0.4710
    • 25:£0.6130
    • 5:£0.7600
    SIS892ADN-T1-GE3
    DISTI # 2283695    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant    		13795
    • 3000:$0.8720
    • 500:$0.8890
    • 100:$1.0300
    • 10:$1.3500
    • 1:$1.6300
    SIS892ADN-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas - 9000
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      OMO.#: OMO-TPS7A4001DGNR-TEXAS-INSTRUMENTS

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      TPD2E001DRLR

      Mfr.#: TPD2E001DRLR

      OMO.#: OMO-TPD2E001DRLR-TEXAS-INSTRUMENTS

      		 ESD Suppressors Low-Cap 2Ch ESD Protection Array
      PIC16F15325-I/SL

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      OMO.#: OMO-PIC16F15325-I-SL-MICROCHIP-TECHNOLOGY

      		 IC MCU 8BIT 14KB FLASH 14SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      1987
      Ingrese la cantidad:
      El precio actual de SIS892ADN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,08 US$
      1,08 US$
      10
      0,89 US$
      8,92 US$
      100
      0,68 US$
      68,50 US$
      500
      0,59 US$
      294,50 US$
      1000
      0,46 US$
      464,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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