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SIS890DN-T1-GE3

SIS890DN-T1-GE3
Mfr. #:
SIS890DN-T1-GE3
Fabricante:
Vishay
Descripción:
Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS890DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIS890DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIS890DN-GE3
Estilo de montaje
SMD / SMT
Nombre comercial
ThunderFET TrenchFET
Paquete-Estuche
PowerPAKR 1212-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PowerPAKR 1212-8
Configuración
Doble
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
52W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
802pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
30A (Tc)
Rds-On-Max-Id-Vgs
23.5 mOhm @ 10A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
29nC @ 10V
Disipación de potencia Pd
52 W
Vgs-Puerta-Fuente-Voltaje
3 V
Id-corriente-de-drenaje-continua
30 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
23.5 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
9.5 nC
Modo de canal
Mejora
Tags
SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIS890DN-T1-GE3
DISTI # V72:2272_07434473		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 10:$0.9649
  • 1:$1.1125
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6237
SIS890DN-T1-GE3
DISTI # 31038280		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		3000
  • 3000:$0.6804
SIS890DN-T1-GE3
DISTI # 31016418		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 13:$0.9649
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7249
  • 6000:$0.7029
  • 12000:$0.6749
  • 18000:$0.6559
  • 30000:$0.6379
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIS890DN-T1-GE3
    DISTI # SIS890DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.9729
    • 6000:€0.6979
    • 12000:€0.5659
    • 18000:€0.4999
    • 30000:€0.4789
    SIS890DN-T1-GE3
    DISTI # 70AC6484    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6484)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3
    DISTI # 70AC6484    		Vishay Intertechnologies 2885
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3.
    DISTI # 30AC0125    		Vishay IntertechnologiesN-CHANNEL 100V POWERPAK 1212-8 THUNDERFET MOSFET 23.5MOHM@10V , ROHS COMPLIANT: YES0
    • 1:$0.6750
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 78-SIS890DN-T1-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		4625
    • 1:$1.4200
    • 10:$1.1700
    • 100:$0.8960
    • 500:$0.7700
    • 1000:$0.6760
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 2283693    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant    		2001
    • 1:$2.2500
    • 10:$1.8500
    • 100:$1.4200
    • 500:$1.2200
    • 1000:$1.0800
    • 3000:$1.0800
    SIS890DN-T1-GE3
    DISTI # 2283693    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant    		2371
    • 5:£1.1100
    • 25:£1.0000
    • 100:£0.7680
    • 250:£0.7150
    • 500:£0.6610
    SIS890DN-T1-GE3
    DISTI # C1S803603778538    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant    		2450
    • 250:$0.7057
    • 100:$0.7841
    • 25:$0.9602
    • 10:$0.9640
    SIS890DN-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas - 15000
      Imagen Parte # Descripción
      SIS890DN-T1-GE3

      Mfr.#: SIS890DN-T1-GE3

      OMO.#: OMO-SIS890DN-T1-GE3

      		 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
      SIS890DN

      Mfr.#: SIS890DN

      OMO.#: OMO-SIS890DN-1190

      		 Nuevo y original
      SIS890DN-T1-GE3

      Mfr.#: SIS890DN-T1-GE3

      OMO.#: OMO-SIS890DN-T1-GE3-VISHAY

      		 Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de SIS890DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,76 US$
      0,76 US$
      10
      0,72 US$
      7,20 US$
      100
      0,68 US$
      68,18 US$
      500
      0,64 US$
      321,95 US$
      1000
      0,61 US$
      606,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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