PartNumber | SIHU6N80E-GE3 | SIHU6N62E-GE3 | SIHU6N65E-GE3 |
Description | MOSFET 800V Vds 30V Vgs IPAK (TO-251) | MOSFET 620V Vds 30V Vgs IPAK (TO-251) | MOSFET 650V Vds 30V Vgs IPAK (TO-251) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 620 V | 650 V |
Id Continuous Drain Current | 5.4 A | 6 A | 7 A |
Rds On Drain Source Resistance | 820 mOhms | 900 mOhms | 600 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 22 nC | 17 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 78 W | 78 W | 78 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | E | E | E |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 18 ns | 16 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9 ns | 10 ns | 12 ns |
Factory Pack Quantity | 75 | 75 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 22 ns | 30 ns |
Typical Turn On Delay Time | 13 ns | 12 ns | 14 ns |
Height | - | 6.22 mm | 6.22 mm |
Length | - | 6.73 mm | 6.73 mm |
Width | - | 2.39 mm | 2.39 mm |
Unit Weight | - | 0.011640 oz | 0.011640 oz |