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SIHU6N62E-GE3

SIHU6N62E-GE3
Mfr. #:
SIHU6N62E-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU6N62E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHU6N62E-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHU6N6, SIHU6, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin IPAK
***nell
MOSFET, N CH, 620V, 6A, TO-251-3
***i-Key
MOSFET N-CH 620V 6A TO-251
***ponent Electronics
TO-251 75PCS/TUBE
***
N-CHANNEL 620V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3-ND		Vishay SiliconixMOSFET N-CH 620V 6A TO-251
Min Qty: 1
Container: Tube		2990In Stock
  • 5025:$0.6650
  • 2550:$0.7000
  • 525:$0.9500
  • 150:$1.1500
  • 75:$1.4000
  • 10:$1.4750
  • 1:$1.6500
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK - Tape and Reel (Alt: SIHU6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6099
  • 18000:$0.6269
  • 12000:$0.6449
  • 6000:$0.6719
  • 3000:$0.6929
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK (Alt: SIHU6N62E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.5529
  • 500:€0.5599
  • 100:€0.5699
  • 50:€0.5779
  • 25:€0.6539
  • 10:€0.8069
  • 1:€1.1249
SIHU6N62E-GE3
DISTI # 78-SIHU6N62E-GE3		Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2995
  • 1:$1.6600
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9050
  • 1000:$0.7150
  • 2500:$0.6670
  • 5000:$0.6340
  • 10000:$0.6100
SIHU6N62E-GE3Vishay Siliconix 2775
    SIHU6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant    		Americas -
      Imagen Parte # Descripción
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3

      		 MOSFET 800V Vds 30V Vgs IPAK (TO-251)
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3

      		 MOSFET 620V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3

      		 MOSFET 650V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
      SIHU6N62E

      Mfr.#: SIHU6N62E

      OMO.#: OMO-SIHU6N62E-1190

      		 Nuevo y original
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3-VISHAY

      		 MOSFET N-CHAN 800V TO-251
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de SIHU6N62E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,91 US$
      0,91 US$
      10
      0,87 US$
      8,69 US$
      100
      0,82 US$
      82,34 US$
      500
      0,78 US$
      388,80 US$
      1000
      0,73 US$
      731,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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