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SIHU6N80E-GE3

SIHU6N80E-GE3
Mfr. #:
SIHU6N80E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU6N80E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU6N80E-GE3 DatasheetSIHU6N80E-GE3 Datasheet (P4-P6)SIHU6N80E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHU6N80E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
5.4 A
Rds On - Resistencia de la fuente de drenaje:
820 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
22 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
2.5 S
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
27 ns
Tiempo típico de retardo de encendido:
13 ns
Tags
SIHU6, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
SIHU6N80E-GE3 Vishay MOSFETs Transistor N-CH 800V 5.4A 3-Pin(3+Tab) IPAK - Arrow.com
***ical
Trans MOSFET N-CH 800V 5.4A 3-Pin(3+Tab) IPAK
*** Europe
N-CH SINGLE 850V TO251
***ark
N-CHANNEL 800V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHU6N80E-GE3
DISTI # V99:2348_21764814		Vishay IntertechnologiesSIHU6N80E-GE33000
  • 5000:$0.9674
  • 2500:$1.0585
  • 1000:$1.1972
  • 500:$1.2862
  • 100:$1.5493
  • 10:$1.9367
  • 1:$2.2012
SIHU6N80E-GE3
DISTI # SIHU6N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V TO-251
Min Qty: 1
Container: Tube		2995In Stock
  • 5000:$1.0028
  • 2500:$1.0179
  • 1000:$1.0933
  • 500:$1.3195
  • 100:$1.6060
  • 10:$1.9980
  • 1:$2.2200
SIHU6N80E-GE3
DISTI # 29435265		Vishay IntertechnologiesSIHU6N80E-GE33000
  • 1000:$1.1972
  • 500:$1.2862
  • 100:$1.5493
  • 10:$1.9367
  • 7:$2.2012
SIHU6N80E-GE3
DISTI # 59AC7418		Vishay IntertechnologiesN-CHANNEL 800V
RoHS: Not Compliant		0
  • 2500:$0.9880
  • 1000:$1.1100
  • 500:$1.2700
  • 100:$1.4100
  • 50:$1.5900
  • 25:$1.7400
  • 10:$1.8800
  • 1:$2.3000
SIHU6N80E-GE3
DISTI # 78-SIHU6N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2983
  • 1:$2.3400
  • 10:$1.9500
  • 100:$1.5700
  • 500:$1.3400
  • 1000:$1.2000
  • 2500:$1.0600
  • 5000:$1.0200
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Mfr.#: UCC28742DBVR

OMO.#: OMO-UCC28742DBVR

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LM2902M/NOPB

Mfr.#: LM2902M/NOPB

OMO.#: OMO-LM2902M-NOPB-TEXAS-INSTRUMENTS

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85504-5001

Mfr.#: 85504-5001

OMO.#: OMO-85504-5001-402

 Modular Connectors / Ethernet Connectors MDJCK 8/8 RA LOPRO SHLD CAT 5E
STM32F070RBT6TR

Mfr.#: STM32F070RBT6TR

OMO.#: OMO-STM32F070RBT6TR-STMICROELECTRONICS

 IC MCU 32BIT 128KB FLASH 64LQFP
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SIHU6N80E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,35 US$
2,35 US$
10
1,95 US$
19,50 US$
100
1,51 US$
151,00 US$
500
1,32 US$
660,00 US$
1000
1,10 US$
1 100,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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